Contactless gating, surface charging and illumination effects in a buried Al0.24Ga0.76As/GaAs quantum well structure

Phonon-mediated desorption of image-bound electrons from dielectric surfaces

“…In principle, the device of Biasini and co-workers 25,26 would also allow to determine the electron sticking coefficient, making it a promising tool for a quantitative experimental investigation of physisorption of electrons specifically at GaAs surfaces. The empirical data about e and s e are however sparse in general.…”

“…Interesting in this respect are also electronegative dielectric structures used in electron emitting devices such as cesium-doped silicon oxide films [22][23][24] and GaAs-based heterostructures. [25][26][27] In contrast to intrinsic surface states, 28 originating either from the abrupt disappearance of the periodic lattice potential or unsaturated bonds at the surface, image states are not localized at the edge but typically a few Å in front of the solid. An external electron approaching the solid from the vacuum with a kinetic energy below the lowest unoccupied intrinsic electron state of the surface may thus get trapped ͑adsorbed͒ in these states provided it can get rid of its excess energy.…”

The scientific contributions of Karl Frederick Canter (1944–2006)

“…The effect is associated with charging of a surface oxide layer and was originally observed for anodized aluminum surfaces. This effect was in the back of my mind recently when working on the concept of contactless gating of a semiconductor [86], but there did not seem to be a place for including the Malter reference.…”