Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well and InAs quantum dashes

Kudrawiec, R.; Sęk, G.; Motyka, M.; Misiewicz, J.; Somers, A.; Höfling, Sven; Worschech, L.; Forchel, A.

doi:10.1063/1.3483948

Cited by 5 publications

(4 citation statements)

References 23 publications

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“…In addi− tion, the existence of the layer of self−assembled QDashes affects the energy states in the neighbouring QW which is separated by the thick barrier layer [57]. CER spectroscopy is a good tool to study the band structure of such T−I structures [57]. However, CER spectrum observed for the T−I structure is quite different.…”

Section: Quantum Dots/dashes Coupled With a Quantum Wellmentioning

confidence: 99%

“…This arrangement provides much faster carrier injection into QDashes and solves the problem with carrier relaxation due to the carrier tunnelling from a QW to QDashes through a thin quantum barrier. The carrier injection efficiency in the "so called" tunnel−injection (T−I) structures depends on many factors [56][57][58] including the energy levels in the auxi− liary QW and the quasi−0 dimensional (0D) objects. In addi− tion, the existence of the layer of self−assembled QDashes affects the energy states in the neighbouring QW which is separated by the thick barrier layer [57].…”

Section: Quantum Dots/dashes Coupled With a Quantum Wellmentioning

confidence: 99%

“…The carrier injection efficiency in the "so called" tunnel−injection (T−I) structures depends on many factors [56][57][58] including the energy levels in the auxi− liary QW and the quasi−0 dimensional (0D) objects. In addi− tion, the existence of the layer of self−assembled QDashes affects the energy states in the neighbouring QW which is separated by the thick barrier layer [57]. CER spectroscopy is a good tool to study the band structure of such T−I structures [57].…”

Section: Quantum Dots/dashes Coupled With a Quantum Wellmentioning

confidence: 99%

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Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures

Misiewicz

Kudrawiec

2012

Opto-Electronics Review

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The authors present the application of contactless electroreflectance (CER) spectroscopy to study optical transitions in low dimensional semiconductor structures including quantum wells (QWs), step-like QWs, quantum dots (QDs), quantum dashes (QDashes), QDs and QDashes embedded in a QW, and QDashes coupled with a QW. For QWs optical transitions between the ground and excited states as well as optical transitions in QW barriers and step-like barriers have been clearly observed in CER spectra. Energies of these transitions have been compared with theoretical calculations and in this way the band structure has been determined for the investigated QWs. For QD and QDash structures optical transitions in QDs and QDashes as well as optical transitions in the wetting layer have been identified. For QDs and QDashes surrounded by a QW, in addition to energies of QD and QDash transitions, energies of optical transitions in the surrounded QW have been measured and the band structure has been determined for the surrounded QW. Finally some differences, which can be observed in CER and photo-reflectance spectra, have been presented and discussed for selected QW and QD structures.

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Section: Quantum Dots/dashes Coupled With a Quantum Wellmentioning

confidence: 99%

Section: Quantum Dots/dashes Coupled With a Quantum Wellmentioning

confidence: 99%

Section: Quantum Dots/dashes Coupled With a Quantum Wellmentioning

confidence: 99%

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Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures

Misiewicz

Kudrawiec

2012

Opto-Electronics Review

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“…TI based devices have also been investigated in the 1060 nm range for high power applications, 10 in spin polarised lasers, 11 and with quantum dash structures for operation in the 1550 nm range. 12 Recently, dilute nitride based injector levels have been investigated as an alternative to InGaAs layers to overcome issues of excessive strain and tunability, and efficient electron tunnelling was realised. 7,13 However, improved modulation performance has not yet been demonstrated.…”

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confidence: 99%

Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range

Pulka

Piwoński

Huyet

et al. 2012

Applied Physics Letters

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The ultrafast gain and refractive index dynamics of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range are investigated using a heterodyne pump probe technique. In the gain regime, ground state wavelengths exhibit full gain recovery in less than 10 ps up to 3 times transparency, attributed to enhanced carrier refilling via the injector layer. The effect of the injector can also been seen in unusual phase dynamics at excited state wavelengths at this injection level.

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On the mechanisms of energy transfer between quantum well and quantum dashes

Sęk¹,

Kudrawiec²,

Podemski³

et al. 2012

Journal of Applied Physics

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We investigate energy transfer mechanisms from a quantum well (QW) to quantum dashes (QDashes) separated by a few nanometer thick barrier in InAs/InGaAs/InGaAlAs/InP material system. We show that at sufficiently low temperatures excitons, which are non-resonantly photogenerated in the QW and then transferred to the ground state via phonon relaxation, can be retrieved by QDashes. The excess of the transferred energy, defined by the energy difference between the QW and QDash exciton states, can be dissipated via interaction with LO phonons if the respective energy matching is satisfied. This kind of exciton injection from QW to QDashes is a process insensitive to the energy level structure of the individual exciton components, i.e., electrons and holes. It is shown that within the single particle picture, the electron energy in QDashes is higher by more than 50 meV compared to the corresponding QW energy, which prevents the electron transfer from quantum well to the dashes. We show experimentally that despite this unfavorable energy difference for single carriers whole QW excitons are efficiently transferred to QDashes and recombine there radiatively.

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Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In0.53Ga0.47As/In0.53Ga0.23Al0.24As quantum well and InAs quantum dashes

Cited by 5 publications

References 23 publications

Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures

Contactless electroreflectance spectroscopy of optical transitions in low dimensional semiconductor structures

Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range

On the mechanisms of energy transfer between quantum well and quantum dashes

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