Contactless Characterization of Electronic Properties of Nanomaterials Using Dielectric Force Microscopy

Lü, Wei; Zhang, Jie; Li, Yize Stephanie; Chen, Qi; Wang, Xiaoping; Hassanien, A.; Chen, Liwei

doi:10.1021/jp300731p

Cited by 36 publications

(91 citation statements)

References 25 publications

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“…Non-contact scanning probe microscopy (SPM), such as electrostatic force microscopy (EFM), 9 dielectric force microscopy (DFM), 10 and Kelvin probe force microscopy (KPFM), 11,12 have been extensively applied to characterize local electronic properties of diverse nanomaterials. [10][11][12][13][14][15][16][17] In a non-contact mode, the probe is lifted at a constant height above the surface of interest, where long-range forces are detected.…”

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confidence: 99%

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Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

Cui

Wang

Chen

et al. 2015

Applied Physics Letters

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Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

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confidence: 99%

“…[10][11][12][13][14][15][16][17] In a non-contact mode, the probe is lifted at a constant height above the surface of interest, where long-range forces are detected. Thus, the techniques avoid the direct surface contact, which enables in-depth investigations in a non-invasive way.…”

mentioning

confidence: 99%

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

Cui

Wang

Chen

et al. 2015

Applied Physics Letters

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“…However, our previous study shows that the probe's lift-up height severely affects the detection results, which makes the method not reliable. In the past, Chen's group proved that transverse polarizability of armchair and zigzag nanotubes is proportional to the square of tube diameter and the longitudinal dielectric properties can differentiate metallic and semiconducting nanotubes theoretically and experimentally [14,15]. In this research, we propose to establish a new detection system based on dielectric force microscopy (DFM) principle [15] to detect CNT's conductivity.…”

Section: Introductionmentioning

confidence: 99%

“…In the past, Chen's group proved that transverse polarizability of armchair and zigzag nanotubes is proportional to the square of tube diameter and the longitudinal dielectric properties can differentiate metallic and semiconducting nanotubes theoretically and experimentally [14,15]. In this research, we propose to establish a new detection system based on dielectric force microscopy (DFM) principle [15] to detect CNT's conductivity. During CNT's conductivity detection, because alternating current (AC) signal with frequency ω is applied to the probe and the substrate, the electric force acting on the probe caused by AC electric field includes three terms: constant term,  term, and 2 term.…”

Section: Introductionmentioning

confidence: 99%

Detecting the electrical conductivity of single walled carbon nano-tubes by a DFM detection system

Zhao

Tian

Liu

et al. 2013

Sci. China Technol. Sci.

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Rare SWCNT materials contain both metallic SWCNT (m-SWCNT) and semi-conducting SWCNT(s-SWCNT). Since m-SWCNT and s-SWCNT have very different applications, it is necessary to differentiate them so as to further separate them for more efficient CNT utilization. To achieve this goal, the authors established a dielectric force microscope (DFM) detection system to differentiate s-SWCNT from m-SWCNT, based on different 2 force decided by SWCNT's conductivity under AC electric field. The experimental results showed that s-SWCNT can be clearly differentiated from m-SWCNT. The statistics analysis shows that the detected number proportion of s-SWCNT to m-SWCNT matches the well-known proportion 2:1 in the normally prepared CNT materials. The above results strongly verified the effectiveness of the detection system. DFM detection system, SWCNT, differentiation, conductivity of CNT Citation:Zhao Z X, Tian X J, Liu J, et al. Detecting the electrical conductivity of single walled carbon nano-tubes by a DFM detection system.

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“…16−18 In particular, dielectric force microscopy (DFM) has demonstrated sensitive detection of the dielectric response and hence the electric conductivity of nanomaterials, with added benefits of spatial resolution and metal contact-free measurement setup. 19 In this Account, we review the principle of the DFM technique and the application of DFM enabled by its unique capabilities and also provide an outlook of this technique.…”

Section: ■ Introductionmentioning

confidence: 99%

Dielectric Force Microscopy: Imaging Charge Carriers in Nanomaterials without Electrical Contacts

Zhang

Lü

et al. 2015

Acc. Chem. Res.

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Nanomaterials are increasingly used in electronic, optoelectronic, bioelectronic, sensing, and energy nanodevices. Characterization of electrical properties at nanometer scales thus becomes not only a pursuit in basic science but also of widespread practical need. The conventional field-effect transistor (FET) approach involves making electrical contacts to individual nanomaterials. This approach faces serious challenges in routine characterization due to the small size and the intrinsic heterogeneity of nanomaterials, as well as the difficulties in forming Ohmic contact with nanomaterials. Since the charge carrier polarization in semiconducting and metallic materials dominates their dielectric response to external fields, detecting dielectric polarization is an alternative approach in probing the carrier properties and electrical conductivity in nanomaterials. This Account reviews the challenges in the electrical conductivity characterization of nanomaterials and demonstrates that dielectric force microscopy (DFM) is a powerful tool to address the challenges. DFM measures the dielectric polarization via its force interaction with charges on the DFM tip and thus eliminates the need to make electrical contacts with nanomaterials. Furthermore, DFM imaging provides nanometer-scaled spatial resolution. Single-walled carbon nanotubes (SWNTs) and ZnO nanowires are used as model systems. The transverse dielectric permittivity of SWNTs is quantitatively measured to be ∼10, and the differences in longitudinal dielectric polarization are exploited to distinguish metallic SWNTs from semiconducting SWNTs. By application of a gate voltage at the DFM tip, the local carrier concentration underneath the tip can be accumulated or depleted, depending on charge carrier type and the density of states near the Fermi level. This effect is exploited to identify the conductivity type and carrier type in nanomaterials. By making comparison between DFM and FET measurements on the exact same SWNTs, it is found that the DFM gate modulation ratio, which is the ratio of DFM signal strengths at different gate voltage, is linearly proportional to the logarithm of FET device on/off ratio. A Drude-level model is established to explain the semilogarithmic correlation between DFM gate modulation ration and FET device on/off ratio and simulate the dependence of DFM force on charge carrier concentration and mobility. Future developments towards DFM imaging of charge carrier concentration or mobility in nanomaterials and nanodevices can thus be expected.

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Contactless Characterization of Electronic Properties of Nanomaterials Using Dielectric Force Microscopy

Cited by 36 publications

References 25 publications

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

Detecting the electrical conductivity of single walled carbon nano-tubes by a DFM detection system

Dielectric Force Microscopy: Imaging Charge Carriers in Nanomaterials without Electrical Contacts

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