Abstract:AlGaN/GaN field effect transistor (FET) structures with a two dimensional electron gas (2DEG) at the interface were investigated by electromodulation spectroscopy [contactless electroreflectance (CER), and soft contact electroreflectance (SCER)]. It has been clearly shown that in contactless mode of electroreflectance (i.e., CER spectroscopy) the 2DEG screens the band bending modulation in GaN layer from the external electromodulation which is generated by the capacitor‐like system. In a result only the optica… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.