2012
DOI: 10.1002/pssa.201200343
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Contact engineering for nano‐scale CMOS

Abstract: High performance computation with longer battery lifetime is an essential component in our today's digital electronics oriented life. To achieve these goals, field effect transistors based complementary metal oxide semiconductor play the key role. One of the critical requirements of transistor structure and fabrication is efficient contact engineering. To catch up with high performance information processing, transistors are going through continuous scaling process. However, it also imposes new challenges to i… Show more

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Cited by 5 publications
(2 citation statements)
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“…Single cells were then cleaved from the substrate and their backsides were sputtered according to the specifications of each metal for the contact study. The as‐deposited metals formed a Schottky contact whereas the post deposition annealed metals formed an Ohmic contact .…”
Section: Methodsmentioning
confidence: 99%
“…Single cells were then cleaved from the substrate and their backsides were sputtered according to the specifications of each metal for the contact study. The as‐deposited metals formed a Schottky contact whereas the post deposition annealed metals formed an Ohmic contact .…”
Section: Methodsmentioning
confidence: 99%
“… Innovative architecture such as FinFET or one-dimensional nanowire devices need to be used. In the recent past we have shown nanotube made up of conventional channel materials can provide both the high performance and ultra-low power operation with area efficiency [17][18][19][20][21] . In most of the occasions such non-planar architecture requires complicated fabrication process and integration.…”
Section: Trend In High Tech Worldmentioning
confidence: 99%