Contact electrification induced interfacial reactions and direct electrochemical nanoimprint lithography in n-type gallium arsenate wafer

Zhang, Jie; Zhang, Lin; Wang, Wei; Han, Lianhuan; Jia, Jingchun; Zhang, Tian; Zhan, Dongping

doi:10.1039/c6sc04091h

Cited by 33 publications

(33 citation statements)

References 46 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…By contrast, with n-type semiconductors (in the dark), the lack of holes prevents delocalized etching to some extent. This has been demonstrated by Zhang et al through high resolution nanoimprint lithography of n + -type Si and n-type GasAs using platinized polymer molds in HF-H2O2 [12][13]. [8], this is the second example of square-based pyramids being produced which are independent of the crystallographic orientation of the Si substrate.…”

Section: Resultsmentioning

confidence: 95%

See 1 more Smart Citation

3D patterning of silicon by contact etching with anodically biased nanoporous gold electrodes

Torralba

Halbwax

Assimi

et al. 2017

Electrochemistry Communications

View full text Add to dashboard Cite

, 3D patterning of silicon by contact etching with anodically biased nanoporous gold electrodes, Electrochemistry Communications (2017Communications ( ), doi:10.1016Communications ( /j.elecom.2017 This is a PDF file of an unedited manuscript that has been accepted for publication. As a service to our customers we are providing this early version of the manuscript. The manuscript will undergo copyediting, typesetting, and review of the resulting proof before it is published in its final form. Please note that during the production process errors may be discovered which could affect the content, and all legal disclaimers that apply to the journal pertain. A C C E P T E D M A N U S C R I P T ABSTRACTA novel strategy to achieve 3D pattern transfer into silicon in a single step without using lithography is presented. Etching is performed electrochemically in HF media by contacting silicon with a positively biased, patterned, metal electrode. Dissolution is localized at the Si/metal contacts and patterning is obtained as the electrode digs into the substrate. Previous attempts at imprinting Si using bulk metal electrodes have been limited by electrolyte blockage. Here, the problem is solved by using, for the first time, a nanoporous metal electrode that allows the electrolyte to access the entire Si/metal interface, irrespective of the electrode dimensions. As a proof of concept, imprinting of well-defined arrays of inverted pyramids has been performed with sub-micrometer spatial resolution over 1 mm 2 using a nanoporous gold electrode of the complementary shape. Under a polarization of +0.3 V/SME in 5M HF, the etch rate is ~0.5 µm/min. The pyramidal pattern is imprinted independently of the Si crystallographic orientation. This maskless imprinting technique opens new opportunities in the fabrication of Si microstructures.

show abstract

Section: Resultsmentioning

confidence: 95%

“…Shape transfer was impossible in Si but easily obtained in porous Si since the electrolyte could reach the metal interface through the porous Si network. A similar nanoimprint lithography approach using platinized PDMS molds has recently been reported for n-type Si and GaAs [12][13].…”

Section: Introductionmentioning

confidence: 99%

3D patterning of silicon by contact etching with anodically biased nanoporous gold electrodes

Torralba

Halbwax

Assimi

et al. 2017

Electrochemistry Communications

View full text Add to dashboard Cite

show abstract

“…Scanning after sensing the separation of the probe and substrate controls the scan rate and etching rate. This active feedback system can be established by sensing the interfacial potential shift between the metal catalyst and the etchant 29 .…”

Section: Resultsmentioning

confidence: 99%

Chemical carving lithography with scanning catalytic probes

Kim

Choi

et al. 2020

Sci Rep

View full text Add to dashboard Cite

This study introduces a new chemical carving technique as an alternative to existing lithography and etching techniques. Chemical carving incorporates the concept of scanning probe lithography and metal-assisted chemical etching (MaCE). A catalyst-coated probe mechanically scans a Si substrate in a solution, and the Si is chemically etched into the shape of the probes, forming pre-defined 3D patterns. A metal catalyst is used to oxidize the Si, and the silicon oxide formed is etched in the solution; this local MaCE reaction takes place continuously on the Si substrate in the scanning direction of probes. Polymer resist patterning for subsequent etching is not required; instead, scanning probes pattern the oxidation mask directly and chemical etching of Si occurs concurrently. A prototype that drives the probe with an actuator was used to analyze various aspects of the etching profiles based on the scanning speeds and sizes of the probe used. This technique suggests the possibility of forming arbitrary structures because the carving trajectory is formed according to the scan direction of the probes.

show abstract

“…An electrochemical nanoimprint lithography (ECNL) approach based on MACE was also developed in the group of Zhan, for GaAs (Zhang et al, 2017a,b) and for silicon (Zhan et al, 2017). A review on electrochemical and nanomachining including ECNL is given in Zhan et al (2017).…”

Section: Introductionmentioning

confidence: 99%

3D Patterning of Si by Contact Etching With Nanoporous Metals

et al. 2019

View full text Add to dashboard Cite

Nanoporous gold and platinum electrodes are used to pattern n-type silicon by contact etching at the macroscopic scale. This type of electrode has the advantage of forming nanocontacts between silicon, the metal and the electrolyte as in classical metal assisted chemical etching while ensuring electrolyte transport to and from the interface through the electrode. Nanoporous gold electrodes with two types of nanostructures, fine and coarse (average ligament widths of ~30 and 100 nm, respectively) have been elaborated and tested. Patterns consisting in networks of square-based pyramids (10 × 10 μm 2 base × 7 μm height) and U-shaped lines (2, 5, and 10 μm width × 10 μm height × 4 μm interspacing) are imprinted by both electrochemical and chemical (HF-H 2 O 2 ) contact etching. A complete pattern transfer of pyramids is achieved with coarse nanoporous gold in both contact etching modes, at a rate of ~0.35 μm min −1 . Under the same etching conditions, U-shaped line were only partially imprinted. The surface state after imprinting presents various defects such as craters, pores or porous silicon. Small walls are sometimes obtained due to imprinting of the details of the coarse gold nanostructure. We establish that np-Au electrodes can be turned into “np-Pt” electrodes by simply sputtering a thin platinum layer (5 nm) on the etching (catalytic) side of the electrode. Imprinting with np Au/Pt slightly improves the pattern transfer resolution. 2D numerical simulations of the valence band modulation at the Au/Si/electrolyte interfaces are carried out to explain the localized aspect of contact etching of n-type silicon with gold and platinum and the different surface state obtained after patterning. They show that n-type silicon in contact with gold or platinum is in inversion regime, with holes under the metal (within 3 nm). Etching under moderate anodic polarization corresponds to a quasi 2D hole transfer over a few nanometers in the inversion layer between adjacent metal and electrolyte contacts and is therefore very localized around metal contacts.

show abstract

Contact electrification induced interfacial reactions and direct electrochemical nanoimprint lithography in n-type gallium arsenate wafer

Abstract: We demonstrated contact electrification induced interfacial redox reactions and developed a direct electrochemical nanoimprint lithography method applicable to crystalline semiconductors.

Cited by 33 publications

References 46 publications

3D patterning of silicon by contact etching with anodically biased nanoporous gold electrodes

3D patterning of silicon by contact etching with anodically biased nanoporous gold electrodes

Chemical carving lithography with scanning catalytic probes

3D Patterning of Si by Contact Etching With Nanoporous Metals

Contact Info

Product

Resources

About