Construction of Sb2S3/CdS/CdIn2S4 cascaded S-scheme heterojunction for improving photoelectrochemical performance

Chen, Yingqi; Cheng, Yufei; Zhao, Jianguo; Zhang, Wenwan; Gao, Jianhua; Miao, Hui; Hu, Xiaoyun

doi:10.1016/j.jcis.2022.07.117

Cited by 34 publications

(19 citation statements)

References 78 publications

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“…In 2 S 3 , as an n-type semiconductor, has a higher Fermi level than p-type Sb 2 Se 3 . When the two materials came into contact with each other, the difference in the concentration of intrinsic carriers led to a spontaneous flow of electrons from the conduction bands (CBs) of In 2 S 3 to the CBs of Sb 2 Se 3 , which is consistent with the XPS analysis [58,59]. When the Fermi levels of Sb 2 Se 3 and In 2 S 3 reached equilibrium, energy band bending occurred, as shown in Fig.…”

Section: Pec Enhanced Mechanismsupporting

confidence: 76%

rGO空间限域生长超薄In2S3纳米片用于构建高效准一维Sb2Se3基异质结光阴极

Cheng

Sun

et al. 2022

Sci. China Mater.

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Antimony selenide (Sb 2 Se 3 ) is a narrow-bandgap semiconductor that has been increasingly used as an excellent light-harvesting material in photoelectrocatalysis. The unique connections of the one-dimensional (Sb 4 Se 6 ) n ribbon structural units determine the high anisotropy of their carrier transport. In this study, a reduced graphene oxide (rGO)modified quasi-one-dimensional Sb 2 Se 3 @In 2 S 3 light-trapping heterostructure was successfully constructed by vapor transport deposition followed by an in situ hydrothermal method. The results showed that the thickness of the in situ grown nonlayered In 2 S 3 nanosheets was significantly reduced from 30 to 10 nm under the space-confinement effect of rGO, facilitating the construction of light-trapping nanostructures and increasing the electrochemically active surface area of the photoelectrode. The quasi-one-dimensional Sb 2 Se 3 @In 2 S 3 -rGO nanorod photoelectrode achieved a higher photocurrent density (1.169 mA cm −2 ), which was 2 and 16 times higher than that of Sb 2 Se 3 @In 2 S 3 and pristine Sb 2 Se 3 , respectively. The ultrathin In 2 S 3 nanosheets were co-modified with rGO nanosheets to fabricate a brush-like composite photoelectrode that exhibited favourable stability with an average hydrogen production rate of 16.59 μmol cm −2 h −1 under neutral conditions. The experimental results and theoretical calculations both showed that the significant improvement in photoelectrochemical performance can be perfectly explained by the type-II heterojunction mechanism. This study provides a new exploration to design rGO-modified composite photoelectrodes for photoelectrochemical applications.

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Section: Pec Enhanced Mechanismsupporting

confidence: 76%

rGO空间限域生长超薄In2S3纳米片用于构建高效准一维Sb2Se3基异质结光阴极

Cheng

Sun

et al. 2022

Sci. China Mater.

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“…24 Chen et al reported that the photoelectrochemical performance can be improved by constructing a Sb 2 S 3 /CdS/CIS cascaded S-type heterojunction. 25 Thus, taking full advantage of the photo-piezoelectric properties of BWO and the suitable band gap of CIS, we try to construct a heterojunction with a built-in electric field induced by the piezoelectric effect to promote the degradation activity. As far as we know, the CdIn 2 S 4 /Bi 2 WO 6 (CIS/BWO) piezophotocatalyst has not been reported yet.…”

Section: Introductionmentioning

confidence: 99%

“…For example, Xiao et al constructed a Z-type MoS 2 /CIS heterojunction for OTC degradation, which exhibits a higher rate constant than that of CIS and MoS 2 , respectively . Chen et al reported that the photoelectrochemical performance can be improved by constructing a Sb 2 S 3 /CdS/CIS cascaded S-type heterojunction . Thus, taking full advantage of the photo-piezoelectric properties of BWO and the suitable band gap of CIS, we try to construct a heterojunction with a built-in electric field induced by the piezoelectric effect to promote the degradation activity.…”

Section: Introductionmentioning

confidence: 99%

Z-Scheme CdIn₂S₄/Bi₂WO₆ Heterojunction for High Piezo-Photo Synergetic Performance

Shi

et al. 2023

Inorg. Chem.

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The piezoelectric effect triggered by mechanical energy could establish an internal electric field to effectively modulate the separation behavior of carriers. Herein, a novel CdIn2S4/Bi2WO6 (CIS/BWO) piezo-photocatalyst for removing diclofenac (DCF) from water was constructed for the first time. Encouragingly, the photocatalytic degradation activity of CIS/BWO was effectively promoted through the piezoelectric effect. Specifically, 10% CIS/BWO exhibited promising DCF degradation performance under co-excitation of light irradiation and ultrasonic vibration, with a degradation efficiency of 99.9% within 40 min, much higher than that of pure photocatalysts (72.3%) and piezocatalysts (60.3%). Meanwhile, an in-depth study of the charge carrier separation mechanism of the CIS/BWO composite under the piezo-photo synergy condition was proposed. Both the built-in electric field induced by the piezoelectric effect in BWO and the Z-scheme transfer path of the CIS/BWO heterojunction are beneficial to interfacial charge transfer. Moreover, the Z-scheme mechanism was further demonstrated by trapping experiments and the electron spin resonance (ESR) technique. Finally, the corresponding intermediates of DCF over CIS/BWO composites and possible degradation pathways were also investigated by DFT calculations and liquid chromatography–mass spectrometry.

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“…On this basis, the selection of suitable semiconductor materials has become a top priority. 10–13 TiO 2 has become an ideal candidate for PEC applications due to its good chemical and thermal stability. 14,15…”

Section: Introductionmentioning

confidence: 99%

TiO₂ spatially confined growth of Sb₂(S,Se)₃@TiO₂ NT heterojunction photoanodes and their photoelectrochemical properties

Jin,

Liu,

Zhang

et al. 2023

Catal. Sci. Technol.

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Construction of Sb2S3/CdS/CdIn2S4 cascaded S-scheme heterojunction for improving photoelectrochemical performance

Cited by 34 publications

References 78 publications

rGO空间限域生长超薄In2S3纳米片用于构建高效准一维Sb2Se3基异质结光阴极

rGO空间限域生长超薄In2S3纳米片用于构建高效准一维Sb2Se3基异质结光阴极

Z-Scheme CdIn₂S₄/Bi₂WO₆ Heterojunction for High Piezo-Photo Synergetic Performance

TiO₂ spatially confined growth of Sb₂(S,Se)₃@TiO₂ NT heterojunction photoanodes and their photoelectrochemical properties

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Construction of Sb2S3/CdS/CdIn2S4 cascaded S-scheme heterojunction for improving photoelectrochemical performance

Cited by 34 publications

References 78 publications

rGO空间限域生长超薄In2S3纳米片用于构建高效准 一维Sb2Se3基异质结光阴极

rGO空间限域生长超薄In2S3纳米片用于构建高效准 一维Sb2Se3基异质结光阴极

Z-Scheme CdIn2S4/Bi2WO6 Heterojunction for High Piezo-Photo Synergetic Performance

TiO2 spatially confined growth of Sb2(S,Se)3@TiO2 NT heterojunction photoanodes and their photoelectrochemical properties

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rGO空间限域生长超薄In2S3纳米片用于构建高效准一维Sb2Se3基异质结光阴极

rGO空间限域生长超薄In2S3纳米片用于构建高效准一维Sb2Se3基异质结光阴极

Z-Scheme CdIn₂S₄/Bi₂WO₆ Heterojunction for High Piezo-Photo Synergetic Performance

TiO₂ spatially confined growth of Sb₂(S,Se)₃@TiO₂ NT heterojunction photoanodes and their photoelectrochemical properties