Construction of high-performance magnetic sensor based on anisotropic magnetoresistance Ta/MgO/NiFe/MgO/Ta film

Pan, Yonglong; Yu, Lingran; Wang, Lei; Chen, Tao; Xin-ya, Wei; Zhu, Ronggui; Li, Jianwei; Feng, Chun; Yu, Guo

doi:10.1007/s12598-021-01719-y

Cited by 11 publications

(7 citation statements)

References 28 publications

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“…During the film deposition, a magnetic field of about 300 Oe was applied along the film surface to induce a uniaxial anisotropy. Then, the films were annealed at 450 °C for 30 min to improve the AMR ratio and reduce the noise . During the annealing process, a magnetic field of ∼700 Oe was applied along the easy axis to ensure the uniform magnetization reversal of magnetic domains.…”

Section: Methodsmentioning

confidence: 99%

“…Then, the films were annealed at 450 °C for 30 min to improve the AMR ratio and reduce the noise. 35 During the annealing process, a magnetic field of ∼700 Oe was applied along the easy axis to ensure the uniform magnetization reversal of magnetic domains. The background vacuum before the film deposition and annealing is better than 3 × 10 −5 Pa.…”

Section: Methodsmentioning

confidence: 99%

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Orbit-Engineered Anisotropic Magnetoresistive Effect for Constructing a Magnetic Sensor with Ultrahigh Sensitivity

Zhu

et al. 2022

ACS Appl. Mater. Interfaces

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A strong anisotropic magnetoresistance (AMR) effect induced by spin–orbit coupling is the basis for constructing a highly sensitive and reliable magnetic sensor. Presently, effective AMR enhancement in traditional films focuses on the modulation of the lattice or charge degree of freedom, leading to a general AMR ratio below 4%. Here, we demonstrate a different strategy to strengthen the AMR effect by tuning the orbital degree of freedom. By inserting an oxygen-affinitive Hf layer into a Ta/MgO/NiFe/MgO/Ta multilayer film, Fe–O orbital hybridization at the MgO/NiFe interface was modulated to trigger an effective orbital reconfiguration of Fe. In turn, the number of holes in the in-plane symmetric d orbits of Fe increased substantially, facilitating the s–d electron scattering to enhance the AMR ratio to 4.8%. By further micromachining the film into a Wheatstone bridge, we constructed a sensing element that displayed an ultrahigh sensitivity of 2.7 mV/V/Oe and a low noise detectability of 0.8 nT/√Hz. These findings help to advance the development of orbit-governed AMR sensors and provide an alternative method for tuning other orbit-related physical effects.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Orbit-Engineered Anisotropic Magnetoresistive Effect for Constructing a Magnetic Sensor with Ultrahigh Sensitivity

Zhu

et al. 2022

ACS Appl. Mater. Interfaces

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“…Recent tremendous studies in condensed matter physics have uncovered various exotic quantum phases with nontrivial topology in the electronic band structure. − The Weyl semimetal presents a monopole-type structure of the Berry curvature, which results in rich physical phenomena. − Moreover, antiferromagnets have garnered extensive interest in the spintronics community as one of the active materials for next-generation spintronic devices, with the prospect of supplying high-density memory integration and ultrafast data processing. − Therefore, a kagome antiferromagnetic (AFM) Weyl semimetal such as Mn 3 Sn, which combines the above two vital advantages, can provide a versatile platform to explore the multifaceted physics of the interplay between topology and magnetism, as well as the emerging topological AFM spintronics and its multifield (magnetic, optical, and electrical fields) manipulations.…”

Section: Introductionmentioning

confidence: 99%

Tunable Spin Textures in a Kagome Antiferromagnetic Semimetal via Symmetry Design

Liu,

Zhang,

Deng

et al. 2023

ACS Nano

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Kagome antiferromagnetic semimetals such as Mn 3 Sn have attracted extensive attention for their potential application in antiferromagnetic spintronics. Realizing high manipulation of kagome antiferromagnetic spin states at room temperature can reveal rich emergent phenomena resulting from the quantum interactions between topology, spin, and correlation. Here, we achieved tunable spin textures of Mn 3 Sn through symmetry design by controlling alternate Mn 3 Sn and heavy-metal Pt thicknesses. The various topological spin textures were predicted with theoretical simulations, and the skyrmion-induced topological Hall effect, strong spin-dependent scattering, and vertical gradient of spin states were obtained by magnetotransport and magnetic circular dichroism (MCD) spectroscopy measurements in Mn 3 Sn/Pt heterostructures. Our work provides an effective strategy for the innovative design of topological antiferromagnetic spintronic devices.

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“…Anisotropic magnetoresistive (AMR) sensors [1] are widely used in geomagnetic navigation [2][3][4], vehicle detection [5][6][7][8] and intelligent manufacturing [9] for its high sensitivity and contactless displacement measurement [10,11]. In real applications, the magnetoresistive strips in AMR sensors usually have large length-width ratio of over 20 [12][13][14][15][16], which can significantly affect the magnetoresistive responses.…”

Section: Introductionmentioning

confidence: 99%

A nonuniform demagnetizing field model for both static and dynamic responses of anisotropic magnetoresistive thin film sensors

Huang,

Shan,

Ren

et al. 2023

J. Phys.: Condens. Matter

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In this paper, an anisotropic magnetoresistive (AMR) thin film sensor which can be used for magnetic scale has been prepared, and its output voltage is about 4.7–4.9 mV V−1. On the basis of the Stoner–Wohlfarth model and with considering the non-uniformity of the demagnetizing field along the width direction of the strips, both the static and dynamic responses of the AMR sensors have been calculated. The results have shown that the calculated results are in agreement with the experimental data. The magnetization rotation in the magnetic sensor strongly depends on the nonuniform demagnetizing field along the width direction. The magnetization at the center is easily rotated into the field direction, and the magnetization at the edge is difficult to be rotated. The smaller the width of the magnetoresistive strip is, the larger both the demagnetizing field at the edge and the saturation field of the magnetic sensor are. The results are helpful for understanding the magnetization rotation of magnetic sensors and developing the magnetic sensors with high performance.

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Construction of high-performance magnetic sensor based on anisotropic magnetoresistance Ta/MgO/NiFe/MgO/Ta film

Cited by 11 publications

References 28 publications

Orbit-Engineered Anisotropic Magnetoresistive Effect for Constructing a Magnetic Sensor with Ultrahigh Sensitivity

Orbit-Engineered Anisotropic Magnetoresistive Effect for Constructing a Magnetic Sensor with Ultrahigh Sensitivity

Tunable Spin Textures in a Kagome Antiferromagnetic Semimetal via Symmetry Design

A nonuniform demagnetizing field model for both static and dynamic responses of anisotropic magnetoresistive thin film sensors

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