“…Fortunately, it is reported in the literature that the in situ growth of In 2 O 3 on b-In 2 S 3 through replacing S atoms with O atoms could reinforce their chemical contact. 41,42,47,48 Moreover, the wide bandgap of In 2 O 3 (2.6-2.8 eV) compared with that of In 2 S 3 will result in a built-in potential gradient in the heterojunction interfaces, which will further increase the separation and migration of photo-induced charge carriers. 32,34,49,50 In this work, a tubular b-In 2 S 3 @In 2 O 3 heterostructure with a porous hexagonal shell coated by N-doped graphite was successfully developed (b-In 2 S 3 /In 2 O 3 @N-C HHR).…”