“…In order to overcome the above mentioned problems, the formation of heterojunction with suitable band gap semiconductor has shown to be an effective method to improve the photocatalytic performance of g‐C 3 N 4 , which could efficiently separate photogenerated electron–hole pairs and inhibiting their recombination . In particular, Z‐scheme configurations are considered an effective strategy in the construction of heterojunctions to improve the charge carrier separation efficiency and the redox ability upon photocatalytic reaction . Currently, a lot of Z‐scheme photocatalysts by combining g‐C 3 N 4 with other semiconductors, such as 2D/2D WO 3 /g‐C 3 N 4 , g‐C 3 N 4 /WO 3 , Bi 2 O 3 /g‐C 3 N 4 , g‐C 3 N 4 /Au/C‐TiO 2 , CuInS 2 /g‐C 3 N 4 , and so on have been reported.…”
Herein, for the first time, a direct Z-scheme g-C 3 N 4 /NiFe 2 O 4 nanocomposite photocatalyst was prepared using facile one-pot hydrothermal method and characterized using XRD, FT-IR, DRS, PL, SEM, EDS, TEM, HRTEM, XPS, BET and VSM characterized techniques. The result reveals that the NiFe 2 O 4 nanoparticles are loaded on the g-C 3 N 4 sheets successfully. The photocatalytic activities of the as-prepared photocatalysts were evaluated for the degradation of methyl orange (MO) under visible light irradiation. It was shown that the photocatalytic activity of the g-C 3 N 4 /NiFe 2 O 4 nanocomposite is about 4.4 and 3 times higher than those of the pristine NiFe 2 O 4 and g-C 3 N 4 respectively. The enhanced photocatalytic activity could be ascribed to the formation of g-C 3 N 4 /NiFe 2 O 4 direct Z-scheme photocatalyst, which results in efficient space separation of photogenerated charge carriers. More importantly, the as-prepared Z-scheme photocatalyst can be recoverable easily from the solution by an external magnetic field and it shows almost the same activity for three consecutive cycles. Considering the simplicity of preparation method, this work will provide new insights into the design of high-performance magnetic Z-scheme photocatalysts for organic contaminate removal.
“…In order to overcome the above mentioned problems, the formation of heterojunction with suitable band gap semiconductor has shown to be an effective method to improve the photocatalytic performance of g‐C 3 N 4 , which could efficiently separate photogenerated electron–hole pairs and inhibiting their recombination . In particular, Z‐scheme configurations are considered an effective strategy in the construction of heterojunctions to improve the charge carrier separation efficiency and the redox ability upon photocatalytic reaction . Currently, a lot of Z‐scheme photocatalysts by combining g‐C 3 N 4 with other semiconductors, such as 2D/2D WO 3 /g‐C 3 N 4 , g‐C 3 N 4 /WO 3 , Bi 2 O 3 /g‐C 3 N 4 , g‐C 3 N 4 /Au/C‐TiO 2 , CuInS 2 /g‐C 3 N 4 , and so on have been reported.…”
Herein, for the first time, a direct Z-scheme g-C 3 N 4 /NiFe 2 O 4 nanocomposite photocatalyst was prepared using facile one-pot hydrothermal method and characterized using XRD, FT-IR, DRS, PL, SEM, EDS, TEM, HRTEM, XPS, BET and VSM characterized techniques. The result reveals that the NiFe 2 O 4 nanoparticles are loaded on the g-C 3 N 4 sheets successfully. The photocatalytic activities of the as-prepared photocatalysts were evaluated for the degradation of methyl orange (MO) under visible light irradiation. It was shown that the photocatalytic activity of the g-C 3 N 4 /NiFe 2 O 4 nanocomposite is about 4.4 and 3 times higher than those of the pristine NiFe 2 O 4 and g-C 3 N 4 respectively. The enhanced photocatalytic activity could be ascribed to the formation of g-C 3 N 4 /NiFe 2 O 4 direct Z-scheme photocatalyst, which results in efficient space separation of photogenerated charge carriers. More importantly, the as-prepared Z-scheme photocatalyst can be recoverable easily from the solution by an external magnetic field and it shows almost the same activity for three consecutive cycles. Considering the simplicity of preparation method, this work will provide new insights into the design of high-performance magnetic Z-scheme photocatalysts for organic contaminate removal.
“…Recently, Gao et al successfully synthesized the dual‐defective rich TiO 2 /g‐C 3 N 4 composite. [ 173 ] XPS, ESR as well as UV‐vis DRS results confirm the existence of abundant defects, which can narrow the bandgap and improve the light harvesting region. Moreover, the photoinduced electrons and holes can also be effectively separated through a Z‐scheme heterojunction pathway.…”
Section: Strategies For Improving Thin‐layered Materials Photocatalytmentioning
Semiconductor photocatalysis, a green and sustainable technology, is of great significance for solving environmental pollution and energy shortages. However, the common problems of inefficient light harvesting, rapid recombination of electron-hole pairs, and low surface reactive reaction sites for photocatalysts urgently need to be solved. In this regard, thin-layered photocatalysts are considered to be one of the most promising candidates for addressing these issues, due to their unique surface and electronic properties. In this review, the various strategies for constructing thin-layered photocatalysts are summarized, and emphasis is given to approaches for optimizing the photocatalytic performance of the thin-layered materials, which can be classified into surface engineering and junction construction. In addition, the photocatalytic applications of thin-layered materials, i.e., water splitting, CO 2 reduction, nitrogen fixation, and molecule oxygen activation, are summarized. Finally, based on current achievements in thin-layered photocatalysts, their future development and challenges are discussed.
“…Besides, dual defect mediated Z-scheme photocatalysts had also been investigated for facilitating interfacial migration and separation. [77] Jia et al [78] reported that Type II heterojunction between CdS and CdWO 4 would convert into direct Z-scheme which benefited by Ohmic contact induced by oxygen defects. These results were confirmed by radical trapping experiments and photo-deposited reaction.…”
Photocatalysis via direct solar-to-chemical energy conversion is an intriguing approach for alleviating the pressure of high energy consumption caused by social development. However, photocatalytic efficiency is greatly restricted by unsatisfactory light-harvesting capacity, high carrier recombination rates, and sluggish reaction kinetics. Indeed, vacancy engineering is an attractive strategy to regulate photocatalytic reaction performance to maximize the utilization and storage of solar energy. In this review, we summarize recent progress about the important roles of vacancy defects on solar-driven photocatalytic applications. The current advanced characterization techniques, especially for in situ/operando techniques, are first presented for elucidating the structure-performance relationships of defective semiconductors in photocatalysis. Subsequently, the crucial roles of vacancies in enhancing photocatalytic performance are highlighted from three important processes: light absorption, carrier separation and migration, and surface reaction. Finally, based on the above understanding, perspectives and opportunities about defective materials are considered for various photocatalytic applications.
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