“…The red-shift of the absorption band edge and the increased absorption in visible light region favor the generation of more charge carriers, resulting in a enhanced photocatalytic activity. The optical band gaps for the semiconductor catalyst can be calculated using the formula in which the α, h , ν, A , and E g represent the absorption coefficient, Planck constant, light frequency, proportionality, and band gap energy, respectively. − The calculated band gaps are about 2.68, 2.715, and 2.69 eV for 2% Fe-EDTA/g-C 3 N 4 , g-C 3 N 4 nanosheets, and bulk g-C 3 N 4 , respectively, corresponding to the diffuse reflectance spectra of the samples. When the bulk g-C 3 N 4 is exfoliated into the g-C 3 N 4 nanosheets, its size and π–π conjugated length are reduced, which leads to increasing of band gap due to the quantum confinement effect. , As the g-C 3 N 4 nanosheets are modified by Fe-EDTA, the Fe ions incorporate into the lattice of g-C 3 N 4 , alter the electronic structures, and form a new impurity band for g-C 3 N 4 which leads to a reduction of the band gap …”