2021
DOI: 10.1109/jphotov.2021.3077445
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Constructing CdS-Based Electron Transporting Layers With Efficient Electron Extraction for Perovskite Solar Cells

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Cited by 6 publications
(7 citation statements)
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“…Figure c shows the optical absorption spectra of perovskite films deposited on different ETLs, revealing that all of samples exhibited almost the identical absorption film thickness. The band gap of direct band gap semiconductor materials can be estimated according to eq where A is the absorption coefficient, h is the Planck constant, υ is the frequency of the incident photon, and c is a constant. , It can be calculated from the Tauc plots (Figure d) that the band gap E g of the MAPbI 3 semiconductor film is about 1.61 eV, which is in agreement with the reported values …”
Section: Results and Discussionmentioning
confidence: 99%
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“…Figure c shows the optical absorption spectra of perovskite films deposited on different ETLs, revealing that all of samples exhibited almost the identical absorption film thickness. The band gap of direct band gap semiconductor materials can be estimated according to eq where A is the absorption coefficient, h is the Planck constant, υ is the frequency of the incident photon, and c is a constant. , It can be calculated from the Tauc plots (Figure d) that the band gap E g of the MAPbI 3 semiconductor film is about 1.61 eV, which is in agreement with the reported values …”
Section: Results and Discussionmentioning
confidence: 99%
“…We performed EIS measurements for PSCs under dark conditions at the bias voltage of 1.0 V. Figure d presents the Nyquist plots of impedance spectra, and Table S3 summarizes the fitting results by using Z-view software. The high-frequency region generally represents the internal resistance ( R s ), and the low-frequency region represents the recombination resistance ( R rec ) at the interface; CPE is generally denoted as the constant phase element. , The R s of m-TiO 2 /SnO 2 -based devices (18.83 Ω) is comparable to that of SnO 2 -based devices (17.83 Ω) and slightly smaller than those of m-TiO 2 -based devices (20.87 Ω), while the R rec of m-TiO 2 /SnO 2 -based devices (2.87 × 10 4 Ω) is greater than those of SnO 2 -based (2.40 × 10 4 Ω) and m-TiO 2 -based devices (2.72 × 10 4 Ω). The measurement results of EIS further confirm that the modification of SnO 2 QDs can enhance the charge transfer at the m-TiO 2 /perovskite interface and inhibit the recombination of carriers.…”
Section: Results and Discussionmentioning
confidence: 99%
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“…improve the device performance of PSCs and found that the presence of the c-TiO 2 underlayer avoids the partial exposure of substrate bumps, enlarges the subsequently deposited perovskite crystals, forms cascade energy level alignments, and accelerates the electron extraction from perovskite to ETLs. [264] SnO 2 : SnO 2 appears as an alternative to the traditional TiO 2 . High electron mobility, deep CB, right energy level, lower crystallization temperature, and good chemical stability are some properties that made SnO 2 a perfect ETL for planar n-i-p PSCs.…”
Section: The Role Of Etl In the Performance Of Planar N-i-p Structure...mentioning
confidence: 99%
“…They designed bilayer TiO 2 /CdS ETLs to improve the device performance of PSCs and found that the presence of the c‐TiO 2 underlayer avoids the partial exposure of substrate bumps, enlarges the subsequently deposited perovskite crystals, forms cascade energy level alignments, and accelerates the electron extraction from perovskite to ETLs. [ 264 ]…”
Section: Common Solar Cell Structures and Their Effect On Performancementioning
confidence: 99%