Constricted nanowire with stabilized magnetic domain wall

Sbiaa, R.; Bahri, M. Al

doi:10.1016/j.jmmm.2016.03.043

Cited by 18 publications

(10 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The stability and the behavior of DW in constricted nanowires was investigated theoretically and experimentally using notches. [77][78][79][80][81][82][83] Figure 7 shows the symmetrical and asymmetrical transverse-type DWs obtained for small and large nanoconstrictions, respectively. [77] It was observed that the width of the DW decreases with the nanoconstriction size.…”

Section: Synapses Based On Multilevel Magnetic Dwmentioning

confidence: 99%

“…Differently, a stepped nanowire based on two connected wires with an offset in both x and y directions was proposed, as shown in Figure 8a. [57,81] The micromagnetic simulation showed a strong dependence on the pinning field (blocking the DW inside the stepped area) and the device geometry. [81] As the value of d increases, the DW becomes strongly pinned as a result of the strong confinement.…”

Section: Synapses Based On Multilevel Magnetic Dwmentioning

confidence: 99%

“…[57,81] The micromagnetic simulation showed a strong dependence on the pinning field (blocking the DW inside the stepped area) and the device geometry. [81] As the value of d increases, the DW becomes strongly pinned as a result of the strong confinement. The parameters L, W, and t are the length, the width, and the thickness of the magnetic nanowire, respectively.…”

Section: Synapses Based On Multilevel Magnetic Dwmentioning

confidence: 99%

See 2 more Smart Citations

Multistate Magnetic Domain Wall Devices for Neuromorphic Computing

Sbiaa

2021

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

In recent years, neuromorphic computing has been intensively investigated, to take over the conventional or von Neumann scheme. Herein, the advantages of memristors as neurons and synapses are discussed. After a brief introduction to biological neurons and synapses, focus is put on spin‐based devices, including magnetic tunnel junction (MTJ) and domain wall devices. Certain materials and device designs aim at mimicking synapses’ functionality, whereas others gather both neurons and synapses. The advancements in spin‐based memory applications are of great advantage for neuromorphic computing and their implementation is presented herein.

show abstract

Section: Synapses Based On Multilevel Magnetic Dwmentioning

confidence: 99%

Section: Synapses Based On Multilevel Magnetic Dwmentioning

confidence: 99%

Section: Synapses Based On Multilevel Magnetic Dwmentioning

confidence: 99%

See 1 more Smart Citation

Multistate Magnetic Domain Wall Devices for Neuromorphic Computing

Sbiaa

2021

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

show abstract

“…In 2016, S. R. Sbiaa et al 14 carried out an extensive research and proposed a novel technique for attaching a domain wall (DW) with the appropriate orientation to a generic model of a magnetic nanowire. The current paper further extends this work by investigating the variation in the parameters and modeling the generic model of a nanowire, carrying out simulations of the magnetization profile in a GPU-accelerated framework.…”

Section: Introductionmentioning

confidence: 99%

Stabilized domain-wall pinning in a constricted nanowire

Prashanth¹,

Ahmed²

2020

Mater. Tehnol.

View full text Add to dashboard Cite

The typical characteristics of spin that relate to logical applications and memory are part of domain walls, where they are utilized as information carriers. Magnetic skyrmions also fall under the above category and their unique topology enables them to exhibit distinct characteristics of a dynamic nature in comparison with domain walls. A novel method of accurately binding a domain wall with a magnetic nanowire is proposed. The domain wall is stapled, at the desired position, to the proposed stepped nanowire, forming a new structure with a simple offset of two single nanowires. The domain wall can be precisely stabilized by creating a stepped nanowire. The parameters of the nanowire such as the size of the step, the properties of the materials and the dimensions are strongly dependent on the critical current regarding the depinning of the domain wall. A low depinning current is required for a wide nanowire. We address the current-induced domain wall in a compressed nanowire computationally via a computer algorithm and simulate the pinning of the domain wall in the compressed region via a graphic-processing-unit (GPU) accelerated micromagnetic simulation framework. Further, in the paper, we investigate the design of the device physics, multiple-bit per single cell memory, utilized in high-performance computing and vision systems.

show abstract

“…In the studies carried out so far, the pinning sites for DW devices were fabricated by traditional lithography process by modifying the geometry, e.g., creation of notches or staggered patterns in the ferromagnetic nanowire . Exchange bias field to pin DWs has also been proposed in the past .…”

mentioning

confidence: 99%

Nanoscale Compositional Modification in Co/Pd Multilayers for Controllable Domain Wall Pinning in Racetrack Memory

Jin

Kumar

Gan

et al. 2018

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

In the era of social media, storage of information plays an important role. Magnetic domain wall memory devices are promising alternatives to hard disk drives for high-capacity storage. One of the challenges in making these devices for practical application is a precise control of domain wall displacement in nanowires. Researchers have extensively studied domain wall pinning based on topographical notches fabricated by lithography. However, scaling the domain wall memory to nanoscale requires better domain wall pinning strategies. In this letter, we demonstrate that the localized modification of magnetic properties in Co/Pd multilayer-based nanowires by ion implantation is an effective non-topographical approach to pin domain walls. First, by micromagnetic simulations, it is shown that the areas, where the composition is modified to tune the anisotropy and magnetization, act as domain wall pinning centers. Experimentally, from magnetization measurements and X-ray diffraction measurements at the thin film level, it is shown that the ion-implantation is effective in changing magnetic anisotropy. Devices have also been fabricated and, using Kerr images at different applied fields, it is shown that the domain walls are pinned at the B þ ion-implanted regions. These results demonstrate that localized compositional modification using ion-implantation can pin domain walls precisely. The achieved results are useful toward realizing high-capacity information storage.Domain wall (DW)-based devices such as racetrack memory have been proposed as promising candidates for high capacity, non-volatile information storage to replace hard disk drives. [1,2] In DW memory (DWM) with a perpendicular magnetic anisotropy (PMA), the domains with magnetization pointing up represent "1" and the regions with magnetization pointing down represent "0." [2,3] In order to read and write information, the DWs are moved by an electrical current which causes motion by the spin-transfer torque (STT) mechanism. [4][5][6][7] Spin Hall effect in heavy metal/ferromagnetic/insulator structures is another mechanism in which a torque is exerted by pure spin current. [8,9] In comparison to STT driving DW motion, pure spin-polarized current gives a high speed performance of DW devices. [10,11] The speed of DW motion in certain designs could reach km s À1 . [11] In order to increase the capacity of DWM, researchers proposed fabricating U-shape vertical nanowire to store data, like the trees planted in the forest. However, fabrication of such devices is challenging particularly for commercial purposes. The other structure is horizontal stripe shape, which suffers from the data storing overflowing issues because the two ends of nanowire cannot be connected. Zhang et al. [12] proposed a ring structure with DW ratchets, which could be utilized for addressing the data overflow issue without any additional overhead.For DW-based devices, the propagation of DWs show a stochastic behavior. This stochastic manner was a significant challenge for magnetic recording comm...

show abstract

Constricted nanowire with stabilized magnetic domain wall

Cited by 18 publications

References 21 publications

Multistate Magnetic Domain Wall Devices for Neuromorphic Computing

Multistate Magnetic Domain Wall Devices for Neuromorphic Computing

Stabilized domain-wall pinning in a constricted nanowire

Nanoscale Compositional Modification in Co/Pd Multilayers for Controllable Domain Wall Pinning in Racetrack Memory

Contact Info

Product

Resources

About