Constrained sintering of Bi₂O₃‐doped ZnO

Abstract

Effects of Bi2O3 on densification kinetics and mechanism of a polycrystalline ZnO ceramics under free and constrained sintering have been investigated. With the presence of 1‐5 wt% Bi2O3, the densification temperature of ZnO is reduced from 1200°C to 850°C under free sintering. Although the densification kinetics of ZnO + 1 wt% Bi2O3 is slowed down due to the presence of in‐plain tensile stress generated during constrained sintering, a high degree of densification of >95% at 950°C is still obtained. The above phenomena are attributed to the formation of Bi2O3‐rich intergranular glassy film at the grain boundaries, yielding a decrease in the grain boundary energy and an increase in the grain boundary migration kinetics of ZnO. Results of molecular dynamics simulation confirm the above observations, at which the ratio of grain boundary energy of ZnO between with and without 1 wt% Bi2O3 is consistent with that obtained experimentally.

Bimetallic In2O3/Bi2O3 Catalysts Enable Highly Selective CO2 Electroreduction to Formate within Ultra‐Broad Potential Windows

“…[37] And the In 3+ and In 0 are found by further analyzing from the Auger In MN1 spectra 2-Theta (degree) according to the crystallographic information file (cif). [38] Meanwhile, the (222) crystal plane of In 2 O 3 also exposes a large atomic spacing of 3.407 Å between In 3+ and In 3+ . [15,39,40] Therefore, the (201) crystal plane of Bi 2 O 3 and (222) crystal plane of In 2 O 3 are highly feasible to make bonding and generate lattice mismatches.…”