1987
DOI: 10.1103/physrevb.35.9298
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Constant-dipole-matrix-element model for Faraday rotation in amorphous semiconductors

Abstract: A model is presented which describes the interband Faraday rotation in amorphous semiconductors by means of a constant dipole matrix element. The model is applied to a-Se, a-AszSe3, and a-As2S3. The parameters which fit the Faraday rotation data and those which describe the corresponding behavior of optical absorption at higher photon energies are more consistent than was the case with earlier descriptions in the constant-momentum-matrix-element model. The energy parameters which are obtained are discussed in … Show more

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Cited by 12 publications
(4 citation statements)
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“…The band gap of a-Se has been reported to be 2.0-2.3 eV in previous studies, the precise value depending on the type of measurement approach. [25][26][27][28] For the present work we take the case E c = 2.3 eV, which is most difficult for the initiation of impact ionization. The phonon energy E r for a-Se is derived from the Raman measurements performed in a separate experiment on the HARP target using a DILOR XY micro-Raman spectrometer, with a 647 nm red light from a He-Ne laser in a backscattering geometry.…”
Section: Application Of the Lucky-drift Model To The Cases Of Impmentioning
confidence: 99%
“…The band gap of a-Se has been reported to be 2.0-2.3 eV in previous studies, the precise value depending on the type of measurement approach. [25][26][27][28] For the present work we take the case E c = 2.3 eV, which is most difficult for the initiation of impact ionization. The phonon energy E r for a-Se is derived from the Raman measurements performed in a separate experiment on the HARP target using a DILOR XY micro-Raman spectrometer, with a 647 nm red light from a He-Ne laser in a backscattering geometry.…”
Section: Application Of the Lucky-drift Model To The Cases Of Impmentioning
confidence: 99%
“…2 except a = 1.1 nm, and b = ␤/4. The E g of a-Se has been reported to be 2.0-2.3 eV, and the precise value depends on the particular sample and type of measurement approach [29,32]. While E i ϳ1.5E g in crystalline semiconductors [30], the average E i in amorphous semiconductors can be close to E g considering carrier generation from the localized states within the mobility gap.…”
Section: Hole Mobility and Impact Ionizationmentioning
confidence: 97%
“…The set of simulation parameters includes: threshold ionization energy E I , optical phonon energy E ph , elastic scattering mean free path k, inelastic scattering mean free path k E and electric field F. The first two parameters are usually known: in a-Se, E ph = 0.031 eV [3,[16][17][18] and E I = 2.3 eV (E I is assumed to be equal to the width of the mobility gap since for a-Se the ionizing excitation across the mobility gap is more probable than the excitation from localized states within the mobility gap [2]). Therefore, k and k E remain only actual simulation parameters for the given field.…”
Section: The Modelmentioning
confidence: 99%