Poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA)
is one of
the most used polymer hole-transport layers in inverted perovskite
solar cells (PVSCs). However, due to the poor crystal quality of perovskite
films prepared on the PTAA underlayer, the solar cells with the PTAA
hole-transport layer have not shown excellent photoelectric performance.
Furthermore, as a polymer semiconductor material, PTAA is highly hydrophobic,
and the wettability of the perovskite precursor solution on the surface
of PTAA is not very good, affecting the crystal quality of the perovskite
film. CuI has not only a suitable energy-level structure and excellent
charge transfer efficiency but also the same element iodine as perovskite,
which is conducive to the formation of good interface contact. In
this paper, a PTAA film is modified with CuI, which not only improves
the wettability but also promotes the crystallization of the perovskite
film. A method is developed to estimate the deep defect density from
transient open-circuit voltage decay. Using this method, we compare
the density of deep-level traps of the perovskite active layer on
a CuI-modified PTAA film with that on a PTAA film. We demonstrate
that CuI modification to PTAA can inhibit both shallow defects and
deep defects, which facilitates carrier transport effectively. The
power conversion efficiency (PCE) of the CuI-modified devices achieves
20.20%, which is significantly higher than the 18.07% of the PTAA-only
devices. This study demonstrates that the inorganic semiconductor
material CuI-modified polymer hole-transport layer is an approach
that would provide guidance for interface modification engineering
of PVSCs.