Consistent Device Simulation Model Describing Perovskite Solar Cells in Steady-State, Transient, and Frequency Domain

Neukom, Martin; Schiller, Andreas; Züfle, Simon; Knapp, Evelyne; Ávila, Jorge; Pérez‐del‐Rey, Daniel; Dreeßen, Chris; Zanoni, Kassio P. S.; Sessolo, Michele; Bolink, Henk J.; Ruhstaller, Beat

doi:10.1021/acsami.9b04991

Cited by 93 publications

(99 citation statements)

References 46 publications

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“…[24,25,40], while the Suns-V OC method is also used in Refs. [2,4,12,16,34]. We consider both the dark J -V and Suns-V OC methods in this work.…”

Section: -3mentioning

confidence: 99%

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Interpreting Ideality Factors for Planar Perovskite Solar Cells: Ectypal Diode Theory for Steady-State Operation

Courtier

2020

Phys. Rev. Applied

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Ideality factors are used to identify the dominant form of recombination in many types of solar cells and guide future development. Unusual noninteger and voltage-dependent ideality factors, which are difficult to explain using the classical diode theory, have been reported for perovskite solar cells and remain unexplained. Experimental measurements and theoretical simulations of the electric potential profile across a planar perovskite solar cell show that significant potential drops occur across each of the perovskiteand transport-layer interfaces. Such potential profiles are fundamentally distinct from the single potential drop that characterizes a p-n or a p-in junction. We propose an analytical model, developed specifically for perovskite devices, in which the ideality factor is replaced by a systematically derived analog, which we term the ectypal factor. In common with the classical theory, the ectypal diode equation is derived as an approximation to a drift-diffusion model for the motion of charges across a solar cell, however, crucially, it incorporates the effects of ion migration within the perovskite absorber layer. The theory provides a framework for analyzing the steady-state performance of a perovskite solar cell (PSC) according to the value of the ectypal factor. Predictions are verified against numerical simulations of a full set of drift-diffusion equations. An important conclusion is that our ability to evaluate PSC performance, using standard techniques such as the analysis of dark J-V or Suns-V OC measurements, relies on understanding how the potential distribution varies with applied voltage. Implications of this work on the interpretation of data from the literature are discussed.

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“…[24,25,40], while the Suns-V OC method is also used in Refs. [2,4,12,16,34]. We consider both the dark J -V and Suns-V OC methods in this work.…”

Section: -3mentioning

confidence: 99%

“…Drift-diffusion models incorporating mobile ionic charge have been shown to be capable of reproducing a wide variety of experimentally observed behavior [32][33][34][35]. In PSCs, a high density of mobile ionic charge is predicted to exist within the perovskite material [36].…”

Section: Introductionmentioning

confidence: 99%

Interpreting Ideality Factors for Planar Perovskite Solar Cells: Ectypal Diode Theory for Steady-State Operation

Courtier

2020

Phys. Rev. Applied

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“…While the spatial distribution may slightly alter the shape of the J-V curves, it does not determine the presence of hysteresis. 71 We note that interfacial recombination would have a significant effect on device hysteresis in cases where it serves as an additional loss mechanism or is associated with a high trap density. 23 As has been reported for some memory devices, 72 the filling of the traps may form a space charge that would diminish the free charge density in their vicinity, and thus limit or delay the current flow.…”

Section: Role Of Bulk and Interface Recombinationmentioning

confidence: 89%

Insights from Device Modeling of Perovskite Solar Cells

Tessler

Vaynzof

2020

ACS Energy Lett.

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In this perspective, we explore the insights into the device physics of perovskite solar cells gained from modeling and simulation of these devices. We discuss a range of factors that influence the modeling of perovskite solar cells, including the role of ions, dielectric constant, density of states, and spatial distribution of recombination losses. By focusing on the effect of non-ideal energetic alignment in perovskite photovoltaic devices, we demonstrate a unique feature in low recombination perovskite materials-the formation of an interfacial, primarily electronic, selfinduced dipole that results in a significant increase in the built-in potential and device open-circuit voltage. Finally, we discuss the future directions of device modeling in the field of perovskite photovoltaics, describing some of the outstanding open questions in which device simulations can serve as a particularly powerful tool for future advancements in the field.

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“…So far, several device models have been reported for describing the operation of PSCs. [ 9,14,20–26 ] Reenen et al explained the hysteretic I – V of PSCs by combining ion motion and charge trapping at the interfaces of perovskite layer. [ 14 ] However, their choice of ion density (10 24 m −3 ) and relative dielectric constant (6.5) is not consistent with other reports.…”

Section: Introductionmentioning

confidence: 99%

“…[ 25 ] Recently, Neukom et al applied an electronic‐ionic device model to simulate a series of experiments, but a validation of the multiple fit parameters was missing. [ 22 ]…”

Section: Introductionmentioning

confidence: 99%

Device Model for Methylammonium Lead Iodide Perovskite With Experimentally Validated Ion Dynamics

Alvar

Blom

Wetzelaer

2020

Adv Elect Materials

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Being based on mixed ionic‐electronic semiconductors, the operation of perovskite solar cells depends on many parameters. To develop an experimentally validated numerical device model, it is therefore necessary to isolate individual physical phenomena. To this end, the dynamics of ion motion in lead halide perovskites is investigated by measuring impedance spectra and the electric displacement as a function of frequency in dark. The displacement response is fully reproduced by a numerical device model that combines electronic and ionic conduction. For a quantitative description of the displacement, it is critical to consider the frequency‐dependent apparent dielectric constant, the ion concentration and the ion diffusion coefficient. The numerical simulations enable to quantify the effect of ion motion and voltage scan speed on the electric field distribution in MAPbI3 based devices, laying the foundations for an experimentally validated perovskite device model.

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Consistent Device Simulation Model Describing Perovskite Solar Cells in Steady-State, Transient, and Frequency Domain

Abstract: In this section the governing equations of the drift-diffusion model implemented in Setfos 4.6 1 are explained. The quantities are described in the next section.

Cited by 93 publications

References 46 publications

Interpreting Ideality Factors for Planar Perovskite Solar Cells: Ectypal Diode Theory for Steady-State Operation

Interpreting Ideality Factors for Planar Perovskite Solar Cells: Ectypal Diode Theory for Steady-State Operation

Insights from Device Modeling of Perovskite Solar Cells

Device Model for Methylammonium Lead Iodide Perovskite With Experimentally Validated Ion Dynamics

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