Considerations for improving the accuracy of large-signal GaAs MESFET models to predict power amplifier circuit performance

Semi-physical nonlinear circuit model with device/physical parameters for HEMTs

“…Because the C gd is smaller than one-tenth of C gs , and more accuracy model of the Q gs is necessary. So we used the conventional expression of the inversely proportional function dependent only on V gd [13] instead, which yields…”

“…Because the C gd is smaller than one-tenth of C gs , and more accuracy model of the Q gs is necessary. So we used the conventional expression of the inversely proportional function dependent only on V gd [13] instead, which yields where V bi , C gdpi , and MSCGD are the built-in voltage, parasitic capacitance, and capacitance coefficient for C gd , respectively. C gd0 is the gate–drain capacitance at V gd = 0.…”

“…High-power amplifiers (HPAs) that include GaN high-electron-mobility transistors (GaN HEMTs) have potential applications in radar systems, satellite communication systems, cellular base stations, etc. Efforts have been made to improve the performance of GaN field effect transistor (FETs) on the basis of the vast experience accumulated over the years [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. While several high-power, high-efficiency HPAs have been reported in the past [1][2][3][4][5], there is considerable scope for improvement of the HPA performance; this is because of the immaturity of the existing GaN technologies.…”

“…Moreover, a relatively large number of parameters must be extracted. On the other hand, physical models involving device/physical parameter calculations are too slow to be used in circuit simulations; further, these models do not converge well during RF simulation because of the complicated and exhaustive calculation for some boundary regions [10][11][12][13]. Therefore, simple ENCMs constructed using device/physical parameters are preferred.…”