Considerations for high-numerical aperture EUV lithography

Levinson, Harry; Mangat, Pawitter J. S.; Wallow, Thomas I.; Sun, Lei; Ackmann, Paul; Meyers, Sheldon

doi:10.1117/12.2015829

Cited by 6 publications

(4 citation statements)

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“…As mentioned before, greater nuclear loss occurs within the nickel top layer; however, the ductile metal film can apparently accommodate the energy loss in part by some observed grain growth. At 1 Â 10 17 He þ /cm 2 , a critical implant concentration for damage has been determined to be $2.5 Â 10 20 He/cm 3 Figure 6 shows sequential TEM cross-section images (a)-(h) for neon ion doses ranging from 0.1 to 1.5 nC/lm 2 (or 6.25 Â 10 16 À9.34 Â 10 17 Ne þ /cm 2 ). Clearly, nickel etching has progressively taken place.…”

Section: B Helium Ion-solid Modelingmentioning

confidence: 99%

“…Extreme-UV lithography (EUVL) is a next generation lithographic technique proposed to continue the trend of miniaturization in the nanoelectronics industry toward the 10 nm node. [1][2][3][4][5] However, this high energy source ($13.5 nm wavelength) requires reflective masks, and thus, a new paradigm for the mask geometry, which consists of a multilayer dielectric mirror of two different materials with alternating refractive indices and thicknesses (2-5 nm), tuned to reflect a very narrow bandwidth. To protect the multilayer stack from oxidation and damage during mask processing, a thin protective layer ($2.5 nm) and a top EUV absorbing layer ($50 nm) is used to produce the pattern.…”

Section: Introductionmentioning

confidence: 99%

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Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair

Gonzalez¹,

Timilsina²,

Li³

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Section: B Helium Ion-solid Modelingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair

Gonzalez¹,

Timilsina²,

Li³

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…6 While TaN EUV absorber films repair strategies have been developed, nickel as an alternative absorber layer has better EUV absorption and thus for practical application require subtractive etch processes to be developed. 7,8 Unfortunately, nickel is fairly inert to many standard halide etch recipes, so purely chemical etch processes are expected to be challenging. We have tried, but were not able to achieve any removal of Ni using electron beam induced etching with XeF 2 and iodine.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of mask repair strategies via focused electron, helium, and neon beam induced processing for EUV applications

et al. 2014

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One critical area for EUV lithography is the development of appropriate mask repair strategies. To this end, we have explored etching repair strategies for nickel absorber layers and focused electron beam induced deposition of ruthenium capping layers. Nickel has higher EUV absorption than the standard TaN absorber layer and thus thinner films and improved optical quality can be realized. A thin (2.5 nm) ruthenium film is commonly used as a protective capping layer on the Mo-Si EUV multi-layer mirror which mechanically and chemically protects the multi-layers during standard mask-making procedures. The gas field ion (GFIS) microscope was used to investigate helium and neon ion beam induced etching (IBIE) of nickel as a candidate technique for EUV lithography mask editing. No discernable nickel etching was observed for helium, however transmission electron microscopy (TEM) revealed subsurface damage to the underlying Mo-Si multilayers. Subsequently, neon beam induced etching at 30 keV was investigated and successfully removed the 50 nm nickel absorber film. TEM imaging also revealed subsurface damage in the underlying Mo-Si multilayer. Two damage regimes were apparent, namely: 1) beam induced mixing of the Mo-Si layers and 2) nanobubble formation. Monte Carlo simulations were performed and the observed damage regimes were correlated to: 1) the nuclear energy loss and 2) a critical implant concentration. Electron beam induced deposition (EBID) was explored to deposit ruthenium capping/protective layers. Several ruthenium precursors were screened and so far liquid bis(ethylcyclopentyldienyl)ruthenium(II) was successful. The purity of the as-deposited nanodeposits was estimated to be 10% Ru and 90% C. We demonstrate a new chemically assisted electron beam purification process to remove carbon by-products and show that high-fidelity nanoscale ruthenium repairs can be realized.

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“…Ultraviolet (UV) curing nanoimprint lithography using inkjet printing technology is expected as the key process for nextgeneration environmentally compatible nanofabrication and bio-nanoelectronic device manufacture. Such nanofabrication and device manufacture entail processes such as ArF immersion lithography using trilayer processes with a resist material, a hardmask, and etching transfer layers; [1][2][3][4][5] double patterning lithography; [6][7][8][9] extreme-ultraviolet (EUV) lithography; [10][11][12][13][14][15] electron beam (EB) lithography; [16][17][18][19] selfassembled lithography; 20,21) and UV curing nanoimprint lithography. [22][23][24][25][26] However, ArF immersion lithography, EUV lithography, and EB lithography, instead of the UV curing nanoimprint lithography are critical to reducing the overall cost of equipment.…”

Section: Introductionmentioning

confidence: 99%

Eco-friendly step-and-flash imprint lithography using ultraviolet-curing liquid material with lactulose derivative derived from medicinal drugs for biomicrochips

Takei

2014

Jpn. J. Appl. Phys.

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Eco-friendly step-and-flash imprint lithography was investigated for the future high-volume manufacture of biomicrochips. A nanoimprinted ultraviolet-curing liquid material with a lactulose derivative derived from medicinal drugs was found to have excellent UV curing properties, film shrinkage during a UV curing reaction, and good etch selectivity with a silicon-based middle layer in CF4 plasma treatment. 80 nm half-pitch lines of the nanoimprinted ultraviolet-curing liquid material with a lactulose derivative were resolved using the process conditions for a trilayer including a silicon-based middle layer with a high silicon concentration of 21.5 wt % and a novolac-based bottom layer on a 100 mm silicon wafer in step-and-flash imprint lithography.

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Considerations for high-numerical aperture EUV lithography

Cited by 6 publications

References 0 publications

Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair

Focused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair

Evaluation of mask repair strategies via focused electron, helium, and neon beam induced processing for EUV applications

Eco-friendly step-and-flash imprint lithography using ultraviolet-curing liquid material with lactulose derivative derived from medicinal drugs for biomicrochips

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