Considerations about the critical thickness for pseudomorphic Si1-xGex growth on Si(001)

Osten, H. J.; Zeindl, H.P.; Bugiel, E.

doi:10.1016/0022-0248(94)90055-8

Cited by 31 publications

(12 citation statements)

References 13 publications

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“…As predicted by the linear analysis (Fig. 2d), the ripples at the early stage (110) SiGe on Si(113) Abstreiter et al (1996) Osten et al (1994) Floro et al (1999 are aligned along two equivalent directions with angles ±31°off the ½ 1 1 0 direction. The surface ripples then evolve into discrete islands well organized in a diamond pattern.…”

Section: Long-term Evolutionmentioning

confidence: 83%

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Effect of elastic anisotropy on surface pattern evolution of epitaxial thin films

Pang¹,

Huang²

2009

International Journal of Solids and Structures

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a b s t r a c tStress-induced surface instability and evolution of epitaxial thin films leads to formation of a variety of self-assembled surface patterns with feature sizes at micro-and nanoscales. The anisotropy in both the surface and bulk properties of the film and substrate has profound effects on the nonlinear dynamics of surface evolution and pattern formation. Experimentally it has been demonstrated that the effect of anisotropy strongly depends on the crystal orientation of the substrate surface on which the film grows epitaxially. In this paper we develop a nonlinear model for surface evolution of epitaxial thin films on generally anisotropic crystal substrates. Specifically, the effect of bulk elastic anisotropy of the substrate on epitaxial surface pattern evolution is investigated for cubic germanium (Ge) and SiGe films on silicon (Si) substrates with four different surface orientations: Si(0 0 1), Si(1 1 1), Si(1 1 0), and Si(1 1 3). Both linear analysis and nonlinear numerical simulations suggest that, with surface anisotropy neglected, ordered surface patterns form under the influence of the elastic anisotropy, and these surface patterns clearly reflect the symmetry of the underlying crystal structures of the substrate. It is concluded that consideration of anisotropic elasticity reveals a much richer dynamics of surface pattern evolution as compared to isotropic models.

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Section: Long-term Evolutionmentioning

confidence: 83%

“…0 for stable, homoepitaxial growth of Si. A few experimental data (Abstreiter et al, 1996;Osten et al, 1994;Floro et al, 1999) are included in Fig. 4 for comparison, all for SiGe films on Si(0 0 1) substrates.…”

Section: Early-stage Evolutionmentioning

confidence: 99%

Effect of elastic anisotropy on surface pattern evolution of epitaxial thin films

Pang¹,

Huang²

2009

International Journal of Solids and Structures

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“…It has been observed experimentally that dislocation-free flat films of less than a certain thickness are stable to surface perturbations, while thicker films are unstable. [7][8][9][10][11][12][13][14] We only consider dislocation-free films, because many experiments show an absence of dislocations especially in early film evolution. 15,16 The instability of an initial planar system was investigated first by Asaro and Tiller 17 and later in great detail by other authors.…”

Section: Introductionmentioning

confidence: 99%

A surface chemical potential and instability of piezoelectric thin films

Zhou

Huang

She

2015

Journal of Applied Physics

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Surface potential measurement of organic thin film on metal electrodes by dynamic force microscopy using a piezoelectric cantileverPiezoelectric materials perform mechanical-to-electrical energy conversion and have unique and enhanced properties, particularly in the thin film form. In this work, the chemical potential of free surface for piezoelectric solids is defined and the mechanical field, electric field, and stability of a piezoelectric ceramic thin film are linearly analyzed. Expressions of the perturbed stress and electric field intensities, to first order approximation in perturbed amplitude to wavelength ratio, are derived, which show that the stresses and electric field intensities are directly proportional to the lattice mismatch and the perturbed amplitude, and decrease with increasing perturbed wavelength. The critically perturbed wavelength, which the flat film for the perturbation is stable, is obtained. V C 2015 AIP Publishing LLC. [http://dx.

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“…These limitations include the existence of a critical thickness for perfect pseudomorphic growth, dependent upon the strain introduced by the Ge, 1 and the fact that Si 1−x Ge x / Si devices are intrinsically better suited to hole channel, rather than electron channel devices, owing to the band offset being in the valence band. These limitations include the existence of a critical thickness for perfect pseudomorphic growth, dependent upon the strain introduced by the Ge, 1 and the fact that Si 1−x Ge x / Si devices are intrinsically better suited to hole channel, rather than electron channel devices, owing to the band offset being in the valence band.…”

Section: Introductionmentioning

confidence: 99%

High spatial resolution mapping of partially strain-compensated SiGe:C films in the presence of postannealed defects

Darahanau

Benci

Nikulin

et al. 2006

Journal of Applied Physics

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Considerations about the critical thickness for pseudomorphic Si1-xGex growth on Si(001)

Cited by 31 publications

References 13 publications

Effect of elastic anisotropy on surface pattern evolution of epitaxial thin films

Effect of elastic anisotropy on surface pattern evolution of epitaxial thin films

A surface chemical potential and instability of piezoelectric thin films

High spatial resolution mapping of partially strain-compensated SiGe:C films in the presence of postannealed defects

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