We have investigated the crystal growth of single-phase MnSi 1.75Àx by a temperature gradient solution growth (TGSG) method using Ga and Sn as solvents and MnSi 1.7 alloy as the solute, and measured the thermoelectric properties of the resulting crystals. Single-phase Mn 11 Si 19 and Mn 4 Si 7 crystals were grown successfully using Ga and Sn as solvents, respectively. The typical size of a grown ingot of Mn 11 Si 19 was 2 mm to 4 mm in thickness and 12 mm in diameter, whereas Mn 4 Si 7 had polyhedral shape with dimensions in the range of several millimeters. The single-phase Mn 11 Si 19 has good electrical conduction (q = 0.89 9 10 À3 X cm to 1.09 9 10 À3 X cm) compared with meltgrown multiphase higher-manganese silicide (HMS) crystals. The Seebeck coefficient, power factor, and thermal conductivity were 77 lV K À1 to 85 lV K À1 , 6.7 lW cm À1 K À2 to 7.2 lW cm À1 K À2 , and 0.032 W cm À1 K À1 , respectively, at 300 K.