Considerable improvement in the stability of solution processed small molecule OLED by annealing

Mao, Guilin; Wu, Zhaoxin; He, Qingping; Jiao, Bo; Xu, Gaoran; Hou, Xun; Chen, Zhijian; Gong, Qihuang

doi:10.1016/j.apsusc.2011.02.046

Cited by 34 publications

(17 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The TFB film with 120 °C annealing conditions have slightly higher surface roughness RMS values than TFB film with the other annealing conditions. It has been discussed in previous studies that an organic film with smooth and pinhole-free surface is obtained by increasing the annealing temperature of the spin-coated organic material 23 . As the annealing temperature and time are increased, the surface roughness RMS value of the organic film becomes gradually lowered, and the specific surface roughness RMS value is maintained depending on the type of the organic materials.…”

Section: Resultsmentioning

confidence: 99%

Optical and Electrical Analysis of Annealing Temperature of High-Molecular Weight Hole Transport Layer for Quantum-dot Light-emitting Diodes

Han

Kang

et al. 2019

Sci Rep

View full text Add to dashboard Cite

In this study, we introduce optimization of the annealing conditions for improvement of hardness and hole transporting properties of high-molecular weight poly [9, 9-dioctylfluorene-co-N-(4-(3-methylpropyl)) diphenylamine] (TFB) film used as a Hole Transport Layer (HTL) of Quantum-dot Light-emitting Diodes (QLEDs). As annealing temperatures were increased from 120 °C to 150 °C or more, no dissolving or intermixing phenomena at the interface between HTL and Quantum-Dot Emission Layer (QDs EML) was observed. However, when the annealing temperatures was increased from 150 °C to 210 °C, the intensity of the absorbance peaks as determined by Fourier Transform Infrared (FT-IR) measurement was found to relatively decrease, and hole transporting properties were found to decrease in the measurement of current density - voltage (CD - V) and capacitance - voltage (C - V) characteristics of Hole Only Devices (HODs) due to thermal damage. At the annealing temperature of 150 °C, the QLEDs device was optimized with TFB films having good hardness and best hole transporting properties for solution processed QLEDs.

show abstract

Section: Resultsmentioning

confidence: 99%

Optical and Electrical Analysis of Annealing Temperature of High-Molecular Weight Hole Transport Layer for Quantum-dot Light-emitting Diodes

Han

Kang

et al. 2019

Sci Rep

View full text Add to dashboard Cite

show abstract

“…Solution process is highly regarded as the lowest-cost way to fabricate such devices, because it could spincoat homogeneous and uniform layers with large area and, moreover, devices fabricated by this method exhibit as excellent performance as those prepared by vapor-deposition method [2]. Indeed, there have been some reports on solution-processed small-molecule OLEDs [3][4][5][6] and our group also has done much research on solution-processed OLEDs of small-molecule mixed-host structures [7][8][9][10][11][12][13]. However, things are quite different for OLEDs with structure of multilayer.…”

Section: Introductionmentioning

confidence: 94%

A solvent/non-solvent system for achieving solution-processed multilayer organic light-emitting devices

et al. 2015

Thin Solid Films

Self Cite

View full text Add to dashboard Cite

“…Generalized method for fabricating OLEDs is vacuum deposition; however, it has crucial drawbacks including significant loss of the expensive organic materials during evaporation, complex manufacturing process and high manufacturing costs. Therefore, interest of solution processed OLEDs was boosted due to their simple manufacturing process, low cost process and possibility for large area flexible display [1]. This paper presents a solution processed OLEDs who's structures to be ITO/PEDOT:PSS/Ir(mppy) 3 surface morphology [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Manufacturing polymer light emitting diode with high luminance efficiency by solution process

Kim

Yang

et al. 2012

Organic Photonics V

View full text Add to dashboard Cite

While investigating polymer light emitting diodes (polymer-LEDs) fabricated by solution process, surface roughness influences electro-optical (E-O) characteristics. We expect that E-O characteristics such as luminance and power efficiency related to surface roughness and layer thickness of emitting layer with poly-9-Vinylcarbazole. In this study, we fabricated polymer organic light emitting diodes by solution process which guarantees easy, eco-friendly and low cost manufacturing for flexible display applications. In order to obtain high luminescence efficiency, E-O characteristics of these devices by varying parameters for printing process have been investigated. Therefore, we optimized process condition for polymer-LEDs by adjusting annealing temperatures of emission, thickness of emission layer showing efficiency (10.8 cd/A) at 10 mA/cm 2 . We also checked wavelength dependent electroluminescence spectrum in order to find the correlation between the variation of efficiency and the thickness of the layer.

show abstract

Considerable improvement in the stability of solution processed small molecule OLED by annealing

Cited by 34 publications

References 14 publications

Optical and Electrical Analysis of Annealing Temperature of High-Molecular Weight Hole Transport Layer for Quantum-dot Light-emitting Diodes

Optical and Electrical Analysis of Annealing Temperature of High-Molecular Weight Hole Transport Layer for Quantum-dot Light-emitting Diodes

A solvent/non-solvent system for achieving solution-processed multilayer organic light-emitting devices

Manufacturing polymer light emitting diode with high luminance efficiency by solution process

Contact Info

Product

Resources

About