Consequences of Spin-Orbit Coupling at the Single Hole Level: Spin-Flip Tunneling and the Anisotropic 
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Bogan, Alex; Studenikin, Sergei; Korkusiński, Marek; Aers, G. C.; Gaudreau, Louis; Zawadzki, Piotr; Sachrajda, A. S.; Tracy, Lisa A; Reno, John L.; Hargett, Terry

doi:10.1103/physrevlett.118.167701

Cited by 36 publications

(69 citation statements)

References 34 publications

(46 reference statements)

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“…For holes in silicon, we find an Ising hyperfine coupling (A 29 Si ⊥ 0, see Table I). The strength of the coupling is comparable to the contact interaction (A 29 Si ) for the conduction band of silicon.…”

Section: B Summary Of Key Resultsmentioning

confidence: 85%

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First-principles hyperfine tensors for electrons and holes in GaAs and silicon

2020

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Understanding (and controlling) hyperfine interactions in semiconductor nanostructures is important for fundamental studies of material properties as well as for quantum information processing with electron, hole, and nuclear-spin states. Through a combination of first-principles densityfunctional theory (DFT) and k · p theory, we have calculated hyperfine tensors for electrons and holes in GaAs and crystalline silicon. Accounting for relativistic effects near the nuclear core, we find contact hyperfine interactions for electrons in GaAs that are consistent with Knight-shift measurements performed on GaAs quantum wells and are roughly consistent with prior estimates extrapolated from measurements on InSb. We find that a combination of DFT and k · p theory (DFT+k · p) is necessary to accurately determine the contact hyperfine interaction for electrons at a conduction-band minimum in silicon that is consistent with bulk Knight-shift measurements. For hole spins in GaAs, the overall magnitude of the hyperfine couplings we find from DFT is consistent with previous theory based on free-atom properties, and with heavy-hole Overhauser shifts measured in GaAs (and InGaAs) quantum dots. In addition, we theoretically predict that the heavy-hole hyperfine coupling to the As nuclear spins is stronger and almost purely Ising, while the (weaker) coupling to the Ga nuclear spins has significant non-Ising corrections. In the case of hole spins in silicon, we find (surprisingly) that the strength of the hyperfine interaction in the valence band is comparable to that in the conduction band and that the hyperfine tensors are highly anisotropic (Ising) in the heavy-hole subspace. These results suggest that the hyperfine coupling cannot be ruled out as a limiting mechanism for coherence (T * 2 ) times recently measured for heavy holes in silicon quantum dots. arXiv:2001.05963v2 [cond-mat.mes-hall]

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Section: B Summary Of Key Resultsmentioning

confidence: 85%

“…The presence of the d orbitals reflects the tetrahedral symmetry of the crystal and introduces the term proportional to J in the matrix h j [Eq. (29)] which has consequences on the symmetries of the hyperfine tensor.…”

Section: B Valence-band Holesmentioning

confidence: 99%

First-principles hyperfine tensors for electrons and holes in GaAs and silicon

2020

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“…Double-dot gated device confining a single hole. Our lateral double quantum dot (DQD) was defined by electrostatic gates on the surface of an undoped GaAs/AlGaAs heterostructure [48][49][50] . Figure 1a shows the gate layout of the device, with the two QD potential minima denoted as 1 and 2, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Instead, we propose a method of projective measurement of a single-hole spin utilizing fast resonant tunneling between dissimilar spin states in adjacent dots. This spin-flip tunneling is much weaker in electronic GaAs quantum dots but was recently reported to be strong in hole quantum dots in the single-hole 49 and two-hole regime 48 . We convert short-lived spin states into long-lived metastable charge states utilizing spin-selective, spin-flip resonant tunneling of a single hole between the dots of the lateral double dot.…”

mentioning

confidence: 87%

“…The spin-to-charge conversion allows measuring T 1 by fitting the leakage current in the Pauli-blockaded state to a theoretical formula describing a relaxation cascade in the electron 3,19,27,47 or hole systems 34,35,37,38 . However, this technique cannot be used directly for our hole GaAs dot because of the strong spin-flip tunneling due to the SOI 48,49 , resulting in the suppression of the spin blockade. Another approach utilizes the spin-selective time-resolved tunneling to leads 20,23,26,28 ; however, the charge detection in our system is not sufficiently fast for high-fidelity sub-microsecond measurements.…”

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confidence: 99%

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Single hole spin relaxation probed by fast single-shot latched charge sensing

et al. 2019

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Hole spins have recently emerged as attractive candidates for solid-state qubits for quantum computing. Their state can be manipulated electrically by taking advantage of the strong spinorbit interaction (SOI). Crucially, these systems promise longer spin coherence lifetimes owing to their weak interactions with nuclear spins as compared to electron spin qubits. Here we measure the spin relaxation time T 1 of a single hole in a GaAs gated lateral double quantum dot device. We propose a protocol converting the spin state into long-lived charge configurations by the SOI-assisted spin-flip tunneling between dots. By interrogating the system with a charge detector we extract the magnetic-field dependence of T 1 ∝ B −5 for fields larger than B = 0.5 T, suggesting the phonon-assisted Dresselhaus SOI as the relaxation channel. This coupling limits the measured values of T 1 from~400 ns at B = 1.5 T up tõ 60 μs at B = 0.5 T.

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Holes Outperform Electrons in Group IV Semiconductor Materials

et al. 2023

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tin (Sn) on silicon or silicon-on-insulator substrates provide a natural route for continued improvement of properties of modern state-of-the-art Si devices with expanding functionalities for mass production. These materials underpin devices with new and/or enhanced properties for applications in electronics, optoelectronics, thermoelectrics, spintronics, sensors, and quantum electronics based on spin qubits.Mobility of free carriers in conduction (electrons) or valance (holes) bands, along with a reasonably large energy bandgap, is one of the most important quality measures of any semiconductor material, determining its suitability for applications in a large variety of classical electronic, optoelectronic, and sensor devices, as well as for novel applications in emerging quantum devices. Higher mobility enables faster operation of a device at lower power consumption and thus leading to reduced Joule heat dissipation, which is essential for scaling and increasing the speed of current electronic devices. It is even more important for those devices and electronics, which work at cryogenic temperatures and are intended to control distributed registers of quantum processors. [2] Also, carrier mobility is the critical quality for quantum devices, often playing a key role toward new discoveries. [3][4][5] When one or more dimensions of a material are reduced sufficiently to the nanometer range, at a scale comparable to the de Broglie wavelength of the carriers, its properties become different from those of the bulk (3D) material. With reduction in size, novel electrical, mechanical, chemical, magnetic, thermal, optical, and other properties emerge. The resulting structure which could be either 2D, 1D, or 0D is then called a lowdimensional structure or system. Compared to conduction band electrons, holes in the valance band possess more complex energy structure. This leads to many special properties including a reduced hyperfine interaction with nuclear spins that is useful for enhanced spin coherence in quantum devices, large and controllable spin-orbit interaction (SOI) for fast and locally addressable spin-based qubits, controllable light-heavy hole interaction for the energy band and g* (effective g-factor)-factor engineering, etc. [6] Compared to electrons, all these complex hole properties can be considered as additional resources for engineering new devices based on hole spins, on SOI, and now on superior mobility. This explains the recent fast-growing interest in p-type (i.e., hole) semiconductor materials for fundamental research

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Consequences of Spin-Orbit Coupling at the Single Hole Level: Spin-Flip Tunneling and the Anisotropic g Factor

Cited by 36 publications

References 34 publications

First-principles hyperfine tensors for electrons and holes in GaAs and silicon

First-principles hyperfine tensors for electrons and holes in GaAs and silicon

Single hole spin relaxation probed by fast single-shot latched charge sensing

Holes Outperform Electrons in Group IV Semiconductor Materials

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