Connection of the Parametric and Functional Control for TID Testing of Complex VLSI Circuits

Marfin, V. A.; Nekrasov, Pavel V.; Loskutov, I.O.

doi:10.1109/radecs.2015.7365595

Cited by 6 publications

(2 citation statements)

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“…Memory cells or units are a part of the vast majority of digital ICs. In some cases memory is the most critical unit of digital ICs due to its sensitivity to radiation [1], [10]- [11]. Radiation environment (space, various ground sources, etc.)…”

Section: Introductionmentioning

confidence: 99%

Memory chips and units radiation tolerance dependence on supply voltage during irradiation and test

et al. 2018

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In this work we investigate the influence of various memory chips supply voltage on their sensitivity to the radiation environment. The main physical mechanisms responsible for radiation-induced degradation at nominal, increased, and decreased supply voltage values are discussed. It is demonstrated that, depending on supply voltage value during irradiation and subsequent testing, device's tolerance to data corruption effects in memory circuits, single event latch-up (SEL) and hard errors induced by ionizing radiation can vary significantly. We also give some recommendations to perform radiation tests.

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Section: Introductionmentioning

confidence: 99%

Memory chips and units radiation tolerance dependence on supply voltage during irradiation and test

et al. 2018

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“…Consequently, a malfunctioning of the product can DOI 10.18502/ken.v3i3.2053 PhIO-2018 be related to the degradation of parameters and the failure of other functional units of the module, such as ROM and microcontroller. Memory cells and microcontrollers of general purpose, in general, have relatively low radiation resistance with the level ofabsorbed dose, at which the device fails, about 5-50 krad [13,14]…”

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confidence: 99%