Connection of envelope functions at semiconductor heterointerfaces. II. Mixings of<i>Γ</i>and<i>X</i>valleys in GaAs/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></

Ando, Tsuneya; Akera, Hiroshi

doi:10.1103/physrevb.40.11619

Cited by 120 publications

(38 citation statements)

References 77 publications

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“…Indeed, the deviation of these amplitudes from their bulk values arises only at a small distance from the interface; this deviation is especially small for the contacts of similar materials (e.g., GaAs/AlAs). 7,15 It seems the boundary conditions (4) connect a very few valleys of the electron spectrum to consider the interface influence on the exciton recombination; nevertheless, it is not the case. Indeed, the electron wave functions in the valleys that are not explicitly involved in Eq.…”

Section: Discussionmentioning

confidence: 99%

“…We assume |t xy,h 21 | ≪ a −1 : this is the result of numerical calculations. 7 Unlike Eqs. (4) the boundary conditions (5) contain the terms depended on ξ.…”

Section: Boundary Conditions At a Rough Interfacementioning

confidence: 95%

“…For the GaAs/AlGaAs interface they have been calculated by Ando et al. 7 We shall consider the particular cases of X z and X xy excitons. This allows us to simplify Eq.…”

Section: Boundary Conditions At a Plane Interfacementioning

confidence: 99%

“…Other elements of the t z ik matrix are small; this is the result of numerical calculations. 7 Note that the band states in the X valley result from interaction of two close-lying bands: lower X 1 and upper X 3 ; meanwhile only the X 3 states mix effectively with Γ states. This means that t ΓX ≈ 1 is the upper estimation of Γ-X mixing.…”

Section: Boundary Conditions At a Plane Interfacementioning

confidence: 99%

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Kinetics of exciton photoluminescence in type-II semiconductor superlattices

et al. 2001

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The exciton decay rate at a rough interface in type-II semiconductor superlattices is investigated. It is shown that the possibility of recombination of indirect excitons at a plane interface essentially affects kinetics of the exciton photoluminescence at a rough interface. This happens because of strong correlation between the exciton recombination at the plane interface and at the roughness. Expressions that relate the parameters of the luminescence kinetics with statistical characteristics of the rough interface are obtained. The mean height and length of roughnesses in GaAs/AlAs superlattices are estimated from the experimental data. 78.66.FdTypeset using REVT E X * Electronic address: brag@isp.nsc.ru

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Section: Discussionmentioning

confidence: 99%

“…We assume |t xy,h 21 | ≪ a −1 : this is the result of numerical calculations. 7 Unlike Eqs. (4) the boundary conditions (5) contain the terms depended on ξ.…”

Section: Boundary Conditions At a Rough Interfacementioning

confidence: 95%

“…For the GaAs/AlGaAs interface they have been calculated by Ando et al. 7 We shall consider the particular cases of X z and X xy excitons. This allows us to simplify Eq.…”

Section: Boundary Conditions At a Plane Interfacementioning

confidence: 99%

Section: Boundary Conditions At a Plane Interfacementioning

confidence: 99%

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Kinetics of exciton photoluminescence in type-II semiconductor superlattices

et al. 2001

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“…(3) were introduced by Ando and Mori for the one-band effective mass model. 5 Later they were also adopted to different milti-band models which describe Γ and X conduction bands, 11,12 degenerate heavy hole and light hole valence bands, 13 and conduction and valence bands within the spherical Kane approximation.…”

Section: Introductionmentioning

confidence: 99%

Interface electronic states and boundary conditions for envelope functions

2002

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The envelope-function method with generalized boundary conditions is applied to the description of localized and resonant interface states. A complete set of phenomenological conditions which restrict the form of connection rules for envelope functions is derived using the Hermiticity and symmetry requirements. Empirical coefficients in the connection rules play role of material parameters which characterize an internal structure of every particular heterointerface. As an illustration we present the derivation of the most general connection rules for the one-band effective mass and 4-band Kane models. The conditions for the existence of Tamm-like localized interface states are established. It is shown that a nontrivial form of the connection rules can also result in the formation of resonant states. The most transparent manifestation of such states is the resonant tunneling through a single-barrier heterostructure.

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