Connecting Higher-Order Topology with the Orbital Hall Effect in Monolayers of Transition Metal Dichalcogenides

Costa, Marcio; Focassio, Bruno; Canonico, Luis M.; Cysne, Tarik P.; Schleder, Gabriel R.; Muniz, R. B.; Fazzio, Adalberto; Rappoport, Tatiana G.

doi:10.1103/physrevlett.130.116204

Cited by 28 publications

(5 citation statements)

References 80 publications

(93 reference statements)

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“…Moreover, as displayed in Figure S10, the topologically nontrivial corner states can emerge in the MoI 3 monolayer with in-plane magnetism, consistent with the tight-binding model, demonstrating the robustness of SOTIs against the magnetic ground state. The SOTI phase has been proposed to be related to an orbital Hall effect . The existence of the orbital Hall plateau within the gap of SOTIs suggests that SOTIs can serve as conduits for the deflection of the orbital angular momentum.…”

Section: Resultsmentioning

confidence: 99%

Coupled Electronic and Magnonic Topological States in Two-Dimensional Ferromagnets

Bai,

Zhang,

Mao

et al. 2024

ACS Nano

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Magnetic materials offer a fertile playground for fundamental physics discovery, with not only electronic but also magnonic topological states intensively explored. However, one natural material with both electronic and magnonic nontrivial topologies is still unknown. Here, we demonstrate the coexistence of first-order topological magnon insulators (TMIs) and electronic second-order topological insulators (SOTIs) in 2D honeycomb ferromagnets, giving rise to the nontrivial corner states being connected by the charge-free magnonic edge states. We show that, with C 3 symmetry, the phase factor ± ϕ caused by the next nearest-neighbor Dzyaloshinskii–Moriya interaction breaks the pseudo-spin time-reversal symmetry scriptT , which leads to the split of magnon bands, i.e., the emergence of TMIs with a nonzero Chern number of scriptC = prefix− 1 , in experimentally feasible candidates of MoI3, CrSiTe3, and CrGeTe3 monolayers. Moreover, protected by the C 3 symmetry, the electronic SOTIs characterized by nontrivial corner states are obtained, bridging the topological aspect of fermions and bosons with a high possibility of innovative applications in spintronics devices.

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Section: Resultsmentioning

confidence: 99%

Coupled Electronic and Magnonic Topological States in Two-Dimensional Ferromagnets

Bai,

Zhang,

Mao

et al. 2024

ACS Nano

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“…Recently, a novel type of topological material characterized as a higher-order topological insulator (HOTI) with extended bulk-boundary correspondence gathered significant research interest. This extended bulk-boundary correspondence notably facilitates topologically protected lower-dimensional hinge/corner states in a three-dimensional insulator [8][9][10][11][12][13][14][15]. Interestingly, for a second-order topological insulator, these symmetry-protected gapless hinge states occur in the energy window where the bulk and surface states are gapped [16][17][18].…”

Section: Introductionmentioning

confidence: 88%

Higher-order topological Dirac phase in Y₃InC: a first-principles study

Sreeparvathy,

Villaos,

Huang

et al. 2024

New J. Phys.

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Higher-order topological insulators hosting intriguing topologically protected hinge or corner states are of significant research interest. However, materials that possess higher-order topological hinge states associated with gapless bulk Dirac phases still need to be explored. Using first-principles calculations with hybrid exchange functional, we explore the electronic structure and topological properties of Y3InC and a few of its sister compounds, totaling 16 bulk materials. A symmetry-protected triple point phase, with dominated d-t 2g character, is observed in Y3InC without spin–orbit coupling (SOC). Interestingly, the SOC induces a twin Dirac node phase in the bulk Y3InC. Furthermore, the computed Z 4 topological invariant reveals the higher-order topological nature of investigated materials. To demonstrate the gapless hinge states, we conduct edge state calculations using a rod-shaped geometry of Y3InC. Remarkably, Y3InC is identified to host multi-Dirac nodes in the bulk and surface phases together with the higher-order hinge states. These results lay the groundwork for further experimental and theoretical investigations into cubic antiperovskite materials for higher-order topological phases.

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“…The OHC for the SOTI phase displays a large magnitude of 1.74 e/ 2π in the insulating region and stays constant throughout the band gap; i.e., the SOTI phase is accompanied by a finite OHC. 38 For the QAHI phase, the value of the OHC decreases to half of that in the SOTI phase, accounting to 0.87 e/2π, and down to roughly zero for the NI phase. This is due to the fact that the L z -character of the states around the CBM and VBM is switched, accompanied by the TPTs.…”

mentioning

confidence: 92%

“…Indeed, the OHCs are very susceptible to the topological properties, undergoing a stepwise reduction following the TPTs. The OHC for the SOTI phase displays a large magnitude of 1.74 e /2π in the insulating region and stays constant throughout the band gap; i.e., the SOTI phase is accompanied by a finite OHC . For the QAHI phase, the value of the OHC decreases to half of that in the SOTI phase, accounting to 0.87 e /2π, and down to roughly zero for the NI phase.…”

mentioning

confidence: 95%

Topology-Engineered Orbital Hall Effect in Two-Dimensional Ferromagnets

Chen,

Li,

Bai

et al. 2024

Nano Lett.

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Recent advances in the manipulation of the orbital angular momentum (OAM) within the paradigm of orbitronics presents a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrate that topological phase transitions present an efficient and straightforward way to engineer the OHE, where the OAM distribution can be controlled by the nature of the band inversion. Using first-principles calculations, we identify Janus RuBrCl and three septuple layers of MnBi 2 Te 4 as experimentally feasible examples of the proposed mechanism of OHE engineering by topology. With our work, we open up new possibilities for innovative applications in topological spintronics and orbitronics.

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Connecting Higher-Order Topology with the Orbital Hall Effect in Monolayers of Transition Metal Dichalcogenides

Cited by 28 publications

References 80 publications

Coupled Electronic and Magnonic Topological States in Two-Dimensional Ferromagnets

Coupled Electronic and Magnonic Topological States in Two-Dimensional Ferromagnets

Higher-order topological Dirac phase in Y₃InC: a first-principles study

Topology-Engineered Orbital Hall Effect in Two-Dimensional Ferromagnets

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Connecting Higher-Order Topology with the Orbital Hall Effect in Monolayers of Transition Metal Dichalcogenides

Cited by 28 publications

References 80 publications

Coupled Electronic and Magnonic Topological States in Two-Dimensional Ferromagnets

Coupled Electronic and Magnonic Topological States in Two-Dimensional Ferromagnets

Higher-order topological Dirac phase in Y3InC: a first-principles study

Topology-Engineered Orbital Hall Effect in Two-Dimensional Ferromagnets

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Higher-order topological Dirac phase in Y₃InC: a first-principles study