Conjugated polymer-based broadband terahertz wave modulator

Zhang, Bo; He, Ting; Shen, Jingling; Hou, Yanbing; Hu, Yufeng; Zang, Mengdi; Chen, Tianji; Feng, Shengfei; Feng, Tao; Qin, Liang

doi:10.1364/ol.39.006110

Cited by 60 publications

(24 citation statements)

References 22 publications

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“…Normally, photons carrying energy higher than the material bandgap are employed, which can be emitted by pulsed or continuous wave (cw) sources. The material of choice is typically silicon [40][41][42][43] or GaAs, which suggests the implementation of optical or nearinfrared lasers, typically 800 nm centered broadband fs-pulsed lasers. In all these experimental situations, the main limits in modulation depth and speed are arising from the substrate material rather than the illumination sources.…”

Section: All-optical Devicesmentioning

confidence: 99%

“…[46] for 120 mW pump power by using a 405 nm cw laser. The modulation depth under optical pumping for both cw and pulsed THz radiation was reported to improve after spinning a polymer on the silicon substrate [43]. The effect was attributed to the increased electron-hole, electron-phonon, and electronimpurities scattering at the organic/inorganic boundary.…”

Section: All-optical Devicesmentioning

confidence: 99%

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All-integrated terahertz modulators

et al. 2017

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Terahertz (0.1-10 THz corresponding to vacuum wavelengths between 30 μm and 3 mm) research has experienced impressive progress in the last few decades. The importance of this frequency range stems from unique applications in several fields, including spectroscopy, communications, and imaging. THz emitters have experienced great development recently with the advent of the quantum cascade laser, the improvement in the frequency range covered by electronic-based sources, and the increased performance and versatility of time domain spectroscopic systems based on full-spectrum lasers. However, the lack of suitable active optoelectronic devices has hindered the ability of THz technologies to fulfill their potential. The high demand for fast, efficient integrated optical components, such as amplitude, frequency, and polarization modulators, is driving one of the most challenging research areas in photonics. This is partly due to the inherent difficulties in using conventional integrated modulation techniques. This article aims to provide an overview of the different approaches and techniques recently employed in order to overcome this bottleneck.

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Section: All-optical Devicesmentioning

confidence: 99%

Section: All-optical Devicesmentioning

confidence: 99%

All-integrated terahertz modulators

et al. 2017

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“…Our recent investigation of a THz-wave modulator based on a polymer-inorganic interface has shown that both transmission and reflection is attenuated under laser excitation, providing evidence supporting an absorption mechanism. 22 In this paper, we report on three THz wave amplitude modulators each incorporating a phthalocyanine compound (AlClPc, CuPc, or SnCl 2 Pc). The three organic/silicon bilayers were fabricated using thermal evaporation.…”

mentioning

confidence: 99%

“…22. A typical THz-TDS with a reliable bandwidth of 0.2-2.6 THz was used to obtain the THz optical parameters of the phthalocyanine films.…”

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confidence: 99%

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High-efficiency THz modulator based on phthalocyanine-compound organic films

Zhang

Shen

et al. 2015

Applied Physics Letters

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We report a high efficiency, broadband terahertz (THz) modulator following a study of phthalocyanine-compound organic films irradiated with an external excitation laser. Both transmission and reflection modulations of each organic/silicon bilayers were measured using THz time-domain and continuous-wave systems. For very low intensities, the experimental results show that AlClPc/Si can achieve a high modulation factor for transmission and reflection, indicating that AlClPc/Si has a superior modulation efficiency compared with the other films (CuPc and SnCl2Pc). In contrast, the strong attenuation of the transmitted and reflected THz waves revealed that a nonlinear absorption process takes place at the organic/silicon interface.

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High‐Performance Photo‐Induced Spatial Terahertz Modulator Based on Micropyramid Silicon Array

Wen

Yang

et al. 2020

Adv Materials Technologies

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Reconfigurable conductive pattern created by photoexcitation of high‐resistivity semiconductor provides a powerful approach to realize broadband spatial terahertz modulators (STM), which are highly demanded for constructing cost‐effective and compact terahertz (THz) system. Here a high performance all‐optical STM is proposed and realized based on silicon micropyramid arrays (Si‐MPA), which not only enhances the light harvesting across a broad wavelength range, but also greatly increases the active area for THz modulation. Upon illuminating the Si‐MPA by light with various wavelengths, modulation depth (MD) of four times larger than that of bare silicon is achieved. A maximum MD of 93.8% is obtained under 638 nm laser with a low power density of 1 W cm−2. Reconfigurable THz imaging system based on the Si‐MPA modulator and a single‐element detector is constructed, with which precise THz beam mapping and fast real‐time imaging with 225 pixels are demonstrated. This Si‐MPA‐based STM with large MD at low illumination power density is promising for many THz applications including imaging, beam shaping, holographic projection, etc.

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Conjugated polymer-based broadband terahertz wave modulator

Cited by 60 publications

References 22 publications

All-integrated terahertz modulators

All-integrated terahertz modulators

High-efficiency THz modulator based on phthalocyanine-compound organic films

High‐Performance Photo‐Induced Spatial Terahertz Modulator Based on Micropyramid Silicon Array

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