Modification of the
π-conjugated backbone structure of conjugated
polyelectrolytes (CPEs) for use as electron injection layers (EILs)
in polymer light emitting diodes (PLEDs) has previously brought conflicted
results in the literature in terms of device efficiency and turn-on
response time. Herein, we determine the energetics at the CPE and
the light emitting polymer (LEP) interface as a key factor for PLED
device performance. By varying the conjugated backbone structure of
both the LEP and CPE, we control the nature of the CPE/LEP interface
in terms of optical energy gap offset, interfacial energy level offset,
and location of the electron–hole recombination zone. We use
a wide gap CPE with a shallow LUMO (F8im-Br) and one with a smaller
gap and deeper LUMO (F8imBT-Br), in combination with three different
LEPs. We find that the formation of a type II heterojunction at the
CPE/LEP interfaces causes interfacial luminance quenching, which is
responsible for poor efficiency in PLED devices. The effect is exacerbated
with increased energy level offset from ionic rearrangement and hole
accumulation occurring near the CPE/LEP interface. However, a deep
CPE LUMO is found to be beneficial for fast current and luminance
turn-on times of devices. This work provides important CPE molecular
design rules for EIL use, offering progress toward a universal PLED-compatible
CPE that can simultaneously deliver high efficiency and fast response
times. In particular, engineering the LUMO position to be deep enough
for fast device turn-on while avoiding the creation of a large energy
level offset at the CPE/LEP interface is shown to be highly desirable.