Congruent vaporization of GaAs(s) and stability of Ga(l) droplets at the GaAs(s) surface

Chatillon, C.; Chatain, Dominique

doi:10.1016/0022-0248(95)00044-5

Cited by 54 publications

(38 citation statements)

References 31 publications

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“…24 In this conditions Ga and As fluxes impinge on the whole exposed sample surface (substrate and NW sidewalls) but desorption of As occurs much faster than that of Ga. Arsenic remains therefore almost in the vapor phase, while Ga adatoms diffuse on the surface and toward the growth front at the NW tip. The As/Ga abundance ratio therefore depends on all factors that may affect Ga arrival rate at the NW tip, such as local temperature fluctuations 25 and different collection areas (e.g.…”

Section: Discussionmentioning

confidence: 98%

Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires

et al. 2011

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We report on the morphological and structural properties of GaAs nanowires nucleated by self-catalyzed vapor-liquid-solid processes by molecular beam epitaxy on Si-treated GaAs substrates. We found that GaAs nanowires display zincblende and/or wurtzite phase depending on the As/Ga abundance ratio at the growth front, that determines the size and supersaturation of the Ga nanoparticles at the nanowire tip. We also found that even when growth conditions lead to the disappearance of such Ga nanoparticles, preferential one-dimensional growth continues through a vapor-solid mechanism. The nanowire portions grown by vapor solid mechanism display zincblend structure

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Section: Discussionmentioning

confidence: 98%

Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires

et al. 2011

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“…At temperatures of 670 C, Ga droplets readily etch GaAs [17][18][19] and also move across the surface driven by a disequilibrium between the droplet and the surface during Langmuir evaporation.…”

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confidence: 99%

Asymmetric coalescence of reactively wetting droplets

Zheng

Tang

Jesson

2012

Applied Physics Letters

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Coalescence of droplets during reactive wetting is investigated for the liquid Ga/GaAs(001) system. In situ mirror electron microscopy reveals that coalescence predominantly involves the motion of one reactive droplet relative to the other. This behaviour differs significantly from coalescence in non-reactive systems and is associated with contact line pinning at a ridge/etch pit edge which is identified using atomic force microscopy and selective etching. A simple geometrical model is presented to describe the pinning.

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“…The value of the kinetic coefficient μ As depends on the surface tension at the interface solid-liquid phase σ sl − in our case it is the interface between the GaAs solid phase and the liquid phase of Ga-As with composition, corresponding to liquidus line. Many investigations are dedicated to the surface tension in the systems Ga-Sn [30,31], Ga-In [31], Ga-Tl [32], Ga-GaAs [33]. In the reference [34] the surface tensions at the interfaces solid-liquid phase, solid-vapor phase and liquid-vapor phase have been determined for GaAs LPE growth.…”

Section: Resultsmentioning

confidence: 99%

Processes in phase boundary region during liquid phase growth

Peev

2013

Cryst. Res. Technol.

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Key words liquid phase growth, phase boundary region.The behavior of components within the phase boundary region during liquid phase growth is the subject of the present article. Based on the supposition that the phase boundary is a structured region, repeating the periodicity of the substrate, the distribution of different components within the phase boundary is considered. Assuming that the value of the supersaturation at the upper end of the phase boundary defines the growth rate of the compound, a relation has been derived, concerning the extension of the phase boundary. The case of liquid phase epitaxial growth of GaAs is considered and an effort for evaluation of the phase boundary extension is undertaken. The linear dependence of the stationary growth rate on the cooling rate, predicted previously, is proved experimentally.

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Congruent vaporization of GaAs(s) and stability of Ga(l) droplets at the GaAs(s) surface

Cited by 54 publications

References 31 publications

Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires

Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires

Asymmetric coalescence of reactively wetting droplets

Processes in phase boundary region during liquid phase growth

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