Conformal thin-film silicon nitride deposited by hot-wire chemical vapor deposition

Wang, Qi; Ward, Scott; Gedvilas, L. M.; Keyes, B. M.; Sanchez, Errol; Wang, Shulin

doi:10.1063/1.1640803

Cited by 44 publications

(19 citation statements)

References 14 publications

(12 reference statements)

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“…In the present work, truly three-dimensional microcavities were conformally deposited on the patterned substrates with two-dimensional arrays of micro-mesas [22][23][24][25], in which omnidirectional optical confinement was based on Bragg reflection. These 3D microcavities, also termed as photonic quantum dots [18], exhibited a series of discrete resonant modes as demonstrated in the room temperature photoluminescence spectra.…”

Section: Introductionmentioning

confidence: 99%

Photonic quantum dots based on Bragg reflectors grown by conformal deposition on patterned substrates

Chen

Qian

Chen

et al. 2008

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Photonic quantum dots based on Bragg reflectors grown by conformal deposition on patterned substrates

Chen

Qian

Chen

et al. 2008

Applied Surface Science

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“…For instance, Q. Wang et al [18] have studied the HWCVD silicon nitride process because of the possible application of SiN x as barrier layers. The presently obtained density of 2.93 g/cm 3 is even higher than that of silicon nitride prepared by high-temperature CVD with dichlorosilane at 760°C [19] and higher than any plasma method.…”

Section: Passivating and Antireflective Hw-sin X :Hmentioning

confidence: 99%

Hot Wire CVD for thin film triple junction cells and for ultrafast deposition of the SiN passivation layer on polycrystalline Si solar cells

et al. 2008

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We present recent progress on hot-wire deposited thin film solar cells and applications of silicon nitride. The cell efficiency reached for μc-Si:H n-i-p solar cells on textured Ag/ZnO presently is 8.5%, in line with the state-of-the-art level for μc-Si:H n-i-p's for any method of deposition. Such cells, used in triple junction cells together with hot-wire deposited proto-Si:H and plasma-deposited SiGe:H, have reached 10.5% efficiency. The single junction μc-Si:H n-i-p cell is entirely stable under prolonged light soaking. The triple junction cell, including protocrystalline i-layers, is within 3% stable, due to the limited thicknesses of the two top cells. The application of SiN x :H at a deposition rate of 3 nm/s to polycrystalline Si wafer solar cells has led to cells with 15.7% efficiency. We have also achieved record high deposition rates of 7.3 nm/s for transparent and dense SiN x ;H. Hot-wire SiN x :H is likely to be the first large commercial application of the Hot Wire CVD (Cat-CVD) technology.

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“…[7][8][9] Most commonly, mixtures of silane (SiH 4 ) and ammonia (NH 3 ) serve as the source gas for the deposition. In the last two decades, the use of hot-wire CVD (HWCVD), also known as Catalytic CVD (Cat-CVD), to deposit silicon nitride (Si x N y ) semiconductor thin films has attracted increasing interest 1,10 because of its ability to grow high quality films at low substrate temperatures while avoiding plasma-induced damages to the films. The technique of HWCVD involves the decomposition of a source gas on a heated metal filament to produce highly reactive radical species, which then react with each other, and with the abundant source gas molecules to generate film-growth precursor species.…”

Section: Introductionmentioning

confidence: 99%

Formation of aminosilanes in the hot-wire chemical vapor deposition process using SiH4-NH3 gas mixtures

Eustergerling¹,

Shi²

2008

Arkivoc

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Vacuum ultraviolet laser single photon-ionization coupled with time-of-flight mass spectrometry has been used to detect the gas-phase reaction products from the HWCVD reactor with SiH 4 -NH 3 mixtures with various partial pressure ratios ranging from 1: 1 to 200 : 1 for NH 3 : SiH 4 . The identity of the products depends strongly on the relative amounts of SiH 4 and NH 3 in the mixture. Low NH 3 content favors the production of disilane and trisilane. When the NH 3 content is high, the formation of aminosilanes becomes the primary pathway. The production of sufficient amount of NH 2 (or ND 2 ) radicals is found to play a key role in the competition between the two pathways. The formation of aminosilanes when using mixtures with an ammonia to silane pressure ratio greater than 49 : 1 is confirmed through the use of the isotopomer ND 3 in place of NH 3 in the gas mixtures. A stepwise amination reaction scheme, initiated by the reaction between the SiH 3 and NH 2 radicals, is responsible for the formation of aminosilanes. The effect of filament temperature on the formation of aminosilanes and di-/trisilane has also been investigated.

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Conformal thin-film silicon nitride deposited by hot-wire chemical vapor deposition

Cited by 44 publications

References 14 publications

Photonic quantum dots based on Bragg reflectors grown by conformal deposition on patterned substrates

Photonic quantum dots based on Bragg reflectors grown by conformal deposition on patterned substrates

Hot Wire CVD for thin film triple junction cells and for ultrafast deposition of the SiN passivation layer on polycrystalline Si solar cells

Formation of aminosilanes in the hot-wire chemical vapor deposition process using SiH4-NH3 gas mixtures

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