Conformal Growth of Hexagonal Boron Nitride on High-Aspect-Ratio Silicon-Based Nanotrenches

Kim, Jiye; Doh, Kyung-Yeon; Moon, Seokho; Choi, Chang Weon; Jeong, Hyomin; Kim, Jae-Won; Yoo, Woojong; Park, Kyungwook; Chong, Kyeongock; Chung, Chunhyng; Choi, Hanmei; Choi, Si‐Young; Lee, Donghwa; Kim, Jong Kyu

doi:10.1021/acs.chemmater.2c03568

Cited by 9 publications

(5 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It has a wide bandgap (4-6 eV), resulting in an insulating property. Like the above materials, h-BN has unique mechanical, electrical, [99] and thermal properties. [100] It has a high thermal conductance and can be effective for heat dissipation, [44,101] and so h-BN has been used as a protective layer to minimize material damage.…”

Section: D Materialsmentioning

confidence: 99%

Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications

Lee

Jeong

et al. 2023

Small Methods

View full text Add to dashboard Cite

Atomically thin 2D transition metal dichalcogenides (TMDs) have recently been spotlighted for next‐generation electronic and photoelectric device applications. TMD materials with high carrier mobility have superior electronic properties different from bulk semiconductor materials. 0D quantum dots (QDs) possess the ability to tune their bandgap by composition, diameter, and morphology, which allows for a control of their light absorbance and emission wavelength. However, QDs exhibit a low charge carrier mobility and the presence of surface trap states, making it difficult to apply them to electronic and optoelectronic devices. Accordingly, 0D/2D hybrid structures are considered as functional materials with complementary advantages that may not be realized with a single component. Such advantages allow them to be used as both transport and active layers in next‐generation optoelectronic applications such as photodetectors, image sensors, solar cells, and light‐emitting diodes. Here, recent discoveries related to multicomponent hybrid materials are highlighted. Research trends in electronic and optoelectronic devices based on hybrid heterogeneous materials are also introduced and the issues to be solved from the perspective of the materials and devices are discussed.

show abstract

Section: D Materialsmentioning

confidence: 99%

Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications

Lee

Jeong

et al. 2023

Small Methods

View full text Add to dashboard Cite

show abstract

“…However, the heterostructure of h-BN thin and catalytic substrates cannot satisfy the needs of various novel device integration. Combining the film with the target substrate by direct growth or transfer, such as GaN 9 , SiO 2 10 , diamond 11 , etc., is more conducive to exploring the performance potential of more new optical and power electronic devices. Among them, the h-BN/diamond heterostructure interfacial coupling electronic properties have attracted a lot of research.…”

Section: Introductionmentioning

confidence: 99%

Tuning the electronic properties and band offset of h-BN/diamond mixed-dimensional heterostructure by biaxial strain

Qu,

Xu,

et al. 2024

Sci Rep

View full text Add to dashboard Cite

The h-BN/diamond mix-dimensional heterostructure has broad application prospects in the fields of optoelectronic devices and power electronic devices. In this paper, the electronic properties and band offsets of hexagonal boron nitride (h-BN)/(H, O, F, OH)-diamond (111) heterostructures were studied by first-principles calculations under biaxial strain. The results show that different terminals could significantly affect the interface binding energy and charge transfer of h-BN/diamond heterostructure. All heterostructures exhibited semiconductor properties. The h-BN/(H, F)-diamond systems were indirect bandgap, while h-BN/(O, OH)-diamond systems were direct bandgap. In addition, the four systems all formed type-II heterostructures, among which h-BN/H-diamond had the largest band offset, indicating that the system was more conducive to the separation of electrons and holes. Under biaxial strain the bandgap values of the h-BN/H-diamond system decreased, and the band type occurred direct–indirect transition. The bandgap of h-BN/(O, F, OH)-diamond system increased linearly in whole range, and the band type only transformed under large strain. On the other hand, biaxial strain could significantly change the band offset of h-BN/diamond heterostructure and promote the application of this heterostructure in different fields. Our work provides theoretical guidance for the regulation of the electrical properties of h-BN/diamond heterostructures by biaxial strain.

show abstract

“…As Khan et al reported, the growth of graphene on silicon (Si) substrates can lead to unwanted chemical bonding between Si and carbon (C) at 900 °C . Similarly, Kim et al demonstrated that boron (B) – oxygen (O) bonds could form during the growth of hexagonal-boron nitrite (h-BN) on silicon dioxide (SiO 2 ) substrates . All these unrelated bonds to 2D film formation can significantly impact the quality and performance of electronic and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

“… 36 Similarly, Kim et al demonstrated that boron (B) – oxygen (O) bonds could form during the growth of hexagonal-boron nitrite (h-BN) on silicon dioxide (SiO 2 ) substrates. 37 All these unrelated bonds to 2D film formation can significantly impact the quality and performance of electronic and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Transfer of 2D Films: From Imperfection to Perfection

Pham,

Mai,

Dash

et al. 2024

ACS Nano

View full text Add to dashboard Cite

Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs and innovations in science and technology. Integrating 2D films into electronics and optoelectronics devices and their applications in electronics and optoelectronics can lead to improve device efficiencies and tunability. Consequently, there has been steady progress in large-area 2D films for both front-and back-end technologies, with a keen interest in optimizing different growth and synthetic techniques. Parallelly, a significant amount of attention has been directed toward efficient transfer techniques of 2D films on different substrates. Current methods for synthesizing 2D films often involve high-temperature synthesis, precursors, and growth stimulants with highly chemical reactivity. This limitation hinders the widespread applications of 2D films. As a result, reports concerning transfer strategies of 2D films from bare substrates to target substrates have proliferated, showcasing varying degrees of cleanliness, surface damage, and material uniformity. This review aims to evaluate, discuss, and provide an overview of the most advanced transfer methods to date, encompassing wet, dry, and quasi-dry transfer methods. The processes, mechanisms, and pros and cons of each transfer method are critically summarized. Furthermore, we discuss the feasibility of these 2D film transfer methods, concerning their applications in devices and various technology platforms.

show abstract

Conformal Growth of Hexagonal Boron Nitride on High-Aspect-Ratio Silicon-Based Nanotrenches

Cited by 9 publications

References 48 publications

Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications

Advances in Heterostructures for Optoelectronic Devices: Materials, Properties, Conduction Mechanisms, Device Applications

Tuning the electronic properties and band offset of h-BN/diamond mixed-dimensional heterostructure by biaxial strain

Transfer of 2D Films: From Imperfection to Perfection

Contact Info

Product

Resources

About