2010 IEEE International Interconnect Technology Conference 2010
DOI: 10.1109/iitc.2010.5510734
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Conformal deposition of electroless barrier and seed layers in TSV with Au nano particle catalyst

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Cited by 4 publications
(6 citation statements)
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“…Further, annealing studies on the copper TSV have been conducted, and results reported in [42]. Other researchers have focused on Ni alloys as the material of choice [38,40]. Joseph et al [25] report on the use of tungstenfilled, multifinger, bar-shaped TSVs in an interposer designed to deliver a low-inductance ground to the package.…”
Section: Tsv Processesmentioning
confidence: 97%
See 1 more Smart Citation
“…Further, annealing studies on the copper TSV have been conducted, and results reported in [42]. Other researchers have focused on Ni alloys as the material of choice [38,40]. Joseph et al [25] report on the use of tungstenfilled, multifinger, bar-shaped TSVs in an interposer designed to deliver a low-inductance ground to the package.…”
Section: Tsv Processesmentioning
confidence: 97%
“…polymers, followed by appropriate thermal processing and removal of excess material from the surface. Extensive work has been done in the development of each of these processes, and the characterization of the resulting TSV's at a variety of dimensions and pitches [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43].…”
Section: Tsv Processesmentioning
confidence: 99%
“…Plating have advantages among others on low cost, thin layer control, good throwing power on dead corner coverage. Meanwhile the drawbacks plating is the environmentally challenge and backside coating is needed to cover the not-to-plated area [6]. Figure 1 illustrates the conventional versus new approach on EMI shielding by plating.…”
Section: 0 Emi Shielding Fabrication Techniquementioning
confidence: 99%
“…The TSV process comprises via etching, via insulation, deposition of the diffusion barrier/liner/seed, deposition of the metal/alloy to fill the TSV, followed by appropriate thermal processing and removal of any overburden. Extensive work has been done in the fabrication, integration, and characterization of TSVs (27,(29)(30)(31)(32)(33)(34)(35)(36)(37)(38)(39)(40)(41)(42)(43)(44)(45)(46)(47). The TSVs may be etched first before any other process, or last, from the backside of thinned wafer, as shown in Figure 7 compared very deep TSVs, in the 100 μm range, with AR approaching 50:1 in the FEOL (29).…”
Section: Tsv Processesmentioning
confidence: 99%
“…Silicon etching may be achieved with the Bosch process, using alternating cycles of passivation (C 4 F 8 ) to prevent lateral etching, followed by silicon etch (SF 6 ) which gives an AR (Aspect Ratio) of > 40:1 (47,48). Several researchers have used the Bosch method (40,42,43,49,57). Others have investigated non-Bosch processes, such as a magnetically-enhanced capacitively-coupled plasma etch method, to achieve an AR approaching 30:1 (45) or an enhanced etch process to achieve deep vias with minimal sidewall scalloping (36).…”
Section: Tsv Processesmentioning
confidence: 99%