2008
DOI: 10.1063/1.2928228
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Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics

Abstract: We present a facile route which combines the functionalization of a highly oriented pyrolytic graphite surface with an atomic layer deposition (ALD) process to allow for conformal Al2O3 layers. While the trimethylaluminum (TMA)∕H2O process caused selective deposition only along step edges, the TMA∕O3 process began to provide nucleation sites on the basal planes of the surface. O3 pretreatment, immediately followed by the ALD process with TMA∕O3 chemistry, formed Al2O3 layers without any preferential deposition… Show more

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Cited by 260 publications
(251 citation statements)
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“…However, it has been rather challenging to deposit oxide dielectrics onto graphene without introducing defects. The deposition of high-κ dielectrics is usually achieved using atomic layer deposition (ALD), which requires reactive surface groups (16)(17)(18)(19)(20). Functionalization of graphene surface for ALD either introduces undesired impurities or breaks the chemical bonds in the graphene lattice, inevitably leading to a significant degradation in carrier mobilities (20).…”
mentioning
confidence: 99%
“…However, it has been rather challenging to deposit oxide dielectrics onto graphene without introducing defects. The deposition of high-κ dielectrics is usually achieved using atomic layer deposition (ALD), which requires reactive surface groups (16)(17)(18)(19)(20). Functionalization of graphene surface for ALD either introduces undesired impurities or breaks the chemical bonds in the graphene lattice, inevitably leading to a significant degradation in carrier mobilities (20).…”
mentioning
confidence: 99%
“…However, the fabrication of graphene devices with an atomically uniform gate dielectric, so as to provide a uniform electric field over the active graphene area without damaging the graphene surface remains a challenge. 9 For this reason and the ease with which graphene can be observed, most reported graphene devices are fabricated on Si/SiO 2 which forms a global back gate. Attempts to deposit dielectrics on the surface of graphene to form top gates have been made, however the deposition processes employed tend to damage the graphene, see e. g. Ref.…”
mentioning
confidence: 99%
“…Non-covalent functionalization layer (NCFL) can be formed prior to ALD growth via molecules like DNA [62], 3,4,9,10-perylene tetracarboxylic acid (PTCA) [63], and NO 2 shown in Figure 4(b) [64][65][66][67]. Besides molecules, polymer can also play the role of NCFL, such as NFC polymers [54,68,69], and ozone pre-treatment (Figure 4(c)) is proved to work for ALD growth as well [70]. Moreover, directly constructing nucleation layer via oxidation of thin film of evaporated or sputtered Al (several nm), followed by Al 2 O 3 ALD growth, is also a choice to form dielectric on graphene surface [71,72].…”
Section: High-κ Dielectric Growth On Graphenementioning
confidence: 99%