Confinement of high Be doping levels in AlInAs/GaInAs <i>npn</i> heterojunction bipolar transistors by low temperature molecular-beam epitaxial growth

Metzger, Robert A.; Hafizi, M.; Stanchina, W.E.; Liu, T.; Wilson, R. G.; McCray, L.

doi:10.1063/1.109677

Cited by 22 publications

(13 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although both epitaxial growth methods are similar, they contain basic different characteristics (epitaxial frame, precursors, growth parameters...). Besides, this diffusion length discrepancy could be also related to the effect of V/Ill flux ratio [8,9].…”

Section: Resultsmentioning

confidence: 94%

“…Be (and Zinc) diffusion were found based on Substitutional-Interstitial Diffusion mechanism (SID), and more precisely, on dissociative [1][2][3][4] or kick-out [5,6] models. Some authors even found that the second model has an advantage over the first [6,71. In contrast, investigations on p-type dopant diffusion in InP based epitaxial compounds, in particular Be in InGaAs, are still limited [8,9,10].…”

Section: Introductionmentioning

confidence: 94%

See 1 more Smart Citation

A Generalized Model of Beryllium Diffusion in InGaASs Epitaxial Structures Under Point Defect Nonequilibrium Conditions

et al. 1997

View full text Add to dashboard Cite

Beryllium diffusion during post-growth annealing is investigated in InGaAs epitaxial layers. Indeed, this undesirable diffusion may occur during thermal treatments of InGaAs/lnP Heterojunction Bipolar Transistors (HBT's), which can generate a limitation of frequency performances of these devices. Epitaxial structures have then been grown, one set by Chemical Beam Epitaxy (CBE), and another one by Gas Source Molecular Beam Epitaxy (GSMBE). The post-growth Rapid Thermal Annealing (RTA) was then performed, and Secondary Ion Mass Spectrometry (SIMS) has been used to characterize the Be depht profiles.In parallel with our experimental study, we propose two models of Be diffusion in InGaAs in the case of point defect nonequilibrium. First, a Kick-out Diffusion model considering neutral Be interstitial species and charged point defects has been studied. Then, a Generalized Substitutional-Interstitial Diffusion model based on simultaneous diffusion by Dissociative and Kick-out mechanisms is proposed. Good agreements between experimental depth profiles and simulated curves have been obtained.

show abstract

Section: Resultsmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 94%

A Generalized Model of Beryllium Diffusion in InGaASs Epitaxial Structures Under Point Defect Nonequilibrium Conditions

et al. 1997

View full text Add to dashboard Cite

show abstract

“…These studies have been based on the substitutional-interstitial diffusion (SID) mechanism and, more precisely, on dissociative [2,17] or kick-out [3,4] models. In contrast, investigations into p-type dopant diffusion in InP-based epitaxial compounds, particularly Be in InGaAs, are limited [15,18,19].…”

Section: Introductionmentioning

confidence: 99%

Beryllium diffusion in InGaAs compounds grown by chemical beam epitaxy

Koumetz

Marcon

Ketata

et al. 1997

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Be diffusion mechanisms during post-growth annealing have been investigated in p-type InGaAs epitaxial layers. These Be-doped InGaAs layers were grown between two undoped InGaAs layers. Annealing cycles with time durations of 30 s to 3 min and temperatures in the range of 500 - 800 for doping concentrations of , and were performed. It was found that there is no significant Be diffusion during post-growth rapid thermal annealing (RTA) for all doping levels if annealing is performed at 500 and 600 for a time under 1 min. The same observation was made for a Be concentration of with annealing at 700 for 30 s. For a doping level of , significant Be diffusion occurs for temperatures and durations greater than 700 and 1 min respectively. The shapes of the obtained curves represent a `double profile' giving rise to a concave region called a `kink'. It was deduced from the experiments that the Be effective diffusion coefficient is approximately constant for the high region of the concentration profiles and proportional to the square root of concentration for the low part of the experimental curves. Assuming the latter coefficient dependence, an effective diffusivity was substituted into Fick's second law and the resulting differential equation was solved numerically using an explicit finite-difference method. Good agreement was obtained between our depth profiles and the corresponding simulated distributions.

show abstract

“…Consequently, in order to improve transistor performance, accurate simulation of Be diffusion is important.The subject of this work is the modelling and simulation of Be diffusion during post-growth rapid thermal annealing (RTA) in In 0.53 Ga 0.47 As layers grown by gas source molecular beam epitaxy (GSMBE) for InP/InGaAs DHBT applications.The diffusion of grown-in Be in InGaAs epilayers has been studied by several authors [2-6]. The variations on the substitutional-interstitial diffusion mechanism (SID) have been put forward to account for the data [2,3,6]. It has been found that the post-growth redistribution of Be in InGaAs depends on epitaxial growth conditions, such as: III-V flux ratio [2], strain layer yield [4,5] and growth temperature [6].…”

mentioning

confidence: 99%

“…The diffusion of grown-in Be in InGaAs epilayers has been studied by several authors [2-6]. The variations on the substitutional-interstitial diffusion mechanism (SID) have been put forward to account for the data [2,3,6]. It has been found that the post-growth redistribution of Be in InGaAs depends on epitaxial growth conditions, such as: III-V flux ratio [2], strain layer yield [4,5] and growth temperature [6].…”

mentioning

confidence: 99%

Beryllium diffusion mechanisms in InGaAs compounds grown by gas source molecular beam epitaxy

et al. 1999

View full text Add to dashboard Cite

The redistribution of the p-type dopant Be during the post-growth rapid thermal annealing in InGaAs layers grown by gas source molecular beam epitaxy has been studied using secondary ion mass spectrometry technique. The experimental structures consisted of a 2000 Å Be-doped (3 × 10 19 cm −3 ) In0.53Ga0.47As layer sandwiched between 5000 Å undoped In0.53Ga0.47As layers. To explain the observed depth profiles, obtained for annealing cycles with time durations of 10 to 240 s and temperatures in the range of 700-900 • C, two models of kick-out mechanism, with neutral and singly positively ionized Be interstitial species, have been considered.Introduction. -One of the most likely acceptor dopants used in InP/InGaAs Double Heterojunction Bipolar Transistors (DHBTs) is beryllium. Although Be can attain high doping levels (due to its high solubility and high sticking coefficient [1]), it is limited by its concentration-dependent diffusivity [2-4], which at high doping levels of Be in InGaAs base may significantly degrade device performance. Consequently, in order to improve transistor performance, accurate simulation of Be diffusion is important.The subject of this work is the modelling and simulation of Be diffusion during post-growth rapid thermal annealing (RTA) in In 0.53 Ga 0.47 As layers grown by gas source molecular beam epitaxy (GSMBE) for InP/InGaAs DHBT applications.The diffusion of grown-in Be in InGaAs epilayers has been studied by several authors [2-6]. The variations on the substitutional-interstitial diffusion mechanism (SID) have been put forward to account for the data [2,3,6]. It has been found that the post-growth redistribution of Be in InGaAs depends on epitaxial growth conditions, such as: III-V flux ratio [2], strain layer yield [4,5] and growth temperature [6]. Experimental procedure. -The experimental samples are InP-based epitaxial structures grown by GSMBE. They consist of a 2000 Å Be-doped (3 × 10 19 cm −3 ) In 0.53 Ga 0.47 As layer

show abstract

Confinement of high Be doping levels in AlInAs/GaInAs npn heterojunction bipolar transistors by low temperature molecular-beam epitaxial growth

Cited by 22 publications

References 22 publications

A Generalized Model of Beryllium Diffusion in InGaASs Epitaxial Structures Under Point Defect Nonequilibrium Conditions

A Generalized Model of Beryllium Diffusion in InGaASs Epitaxial Structures Under Point Defect Nonequilibrium Conditions

Beryllium diffusion in InGaAs compounds grown by chemical beam epitaxy

Beryllium diffusion mechanisms in InGaAs compounds grown by gas source molecular beam epitaxy

Contact Info

Product

Resources

About