Confined VLS growth and structural characterization of silicon nanoribbons

Lecestre, Aurélie; Dubois, Emmanuel; Villaret, A.; Skotnicki, T.; Coronel, P.; Patriarche, G.; Maurice, Claude

doi:10.1016/j.mee.2009.11.053

Cited by 7 publications

(3 citation statements)

References 8 publications

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“…Additionally, electron backscattered diffraction (EBSD) method was utilized for obtaining the nanowire crystallographic properties at high resolution in similarity to previous studies. − A detailed study of our as-prepared nanowire structures shows, Figure , that all the on-wafer grown nanowires have crystalline structures. Clearly, nanowires confined to the nanotunnels can adopt any shape, even sharp at turning angles, without leading to termination of nanowires growth.…”

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confidence: 77%

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Confinement-Guided Shaping of Semiconductor Nanowires and Nanoribbons: “Writing with Nanowires”

et al. 2011

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To fully exploit their full potential, new semiconductor nanowire building blocks with ab initio controlled shapes are desired. However, and despite the great synthetic advances achieved, the ability to control nanowire's geometry has been significantly limited. Here, we demonstrate a simple confinement-guided nanowire growth method that enables to predesign not only the chemical and physical attributes of the synthesized nanowires but also allows a perfect and unlimited control over their geometry. Our method allows the synthesis of semiconductor nanowires in a wide variety of two-dimensional shapes such as any kinked (different turning angles), sinusoidal, linear, and spiral shapes, so that practically any desired geometry can be defined. The shape-controlled nanowires can be grown on almost any substrate such as silicon wafer, quartz and glass slides, and even on plastic substrates (e.g., Kapton HN).

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confidence: 77%

“…Additionally, electron backscattered diffraction (EBSD) method was utilized for obtaining the nanowire crystallographic properties at high resolution 33 in similarity to previous studies. 34−36 A detailed study of our as-prepared nanowire structures shows, Figure 4, that all the on-wafer grown nanowires have crystalline structures.…”

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confidence: 98%

Confinement-Guided Shaping of Semiconductor Nanowires and Nanoribbons: “Writing with Nanowires”

et al. 2011

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“…In order to address this challenge, a lateral growth technique has recently been developed to grow thin films on a substrate [14][15][16][17][18]. Lateral thin film growth is similar to traditional nanowire growth because the VLS mechanism is also used in the growth process.…”

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confidence: 99%

Effects of Au catalyst geometry on Ge films grown laterally on Si using the vapor–liquid–solid mechanism

Wang

Tong

Quitoriano

2019

J. Phys. D: Appl. Phys.

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A lateral epitaxial growth technique has been demonstrated to grow high-quality Ge micro-films on Si at low temperatures using the vapor–liquid–solid mechanism. These Ge films were grown within a confined structure to foster horizontal growth in the presence of Au catalyst. In this work the size and geometric shape of the Au catalyst were shown to impact the film size and morphology. In particular, a general trend was observed, as the size of Au catalyst increased the Ge film size initially increased as well until the Ge film size plateaued and eventually decreased. This phenomenon is described by a model, which is a function of Au catalyst size and GeH4 dose and can be used to estimate the final Ge film size. In general, a large-sized Au catalyst absorbs more Ge because of its large vapor–liquid interface but it also requires more Ge to saturate the liquid, and therefore this fact results in a peak in the plot of the Ge film size versus the Au size. In addition, a large GeH4 dose due to more absorption of GeH4 leads to multiple nucleation sites in a small Au catalyst, while a micro-crucible with a larger Au volume or reduced vapor–liquid interface can help to realize single nucleation. These results helped in designing two-opening Au catalysts with asymmetric sides, which preferentially nucleates a large crystal near the wider side.

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Confined and Guided Vapor–Liquid–Solid Catalytic Growth of Silicon Nanoribbons: From Nanowires to Structured Silicon-on-Insulator Layers

Lecestre

Dubois²,

Villaret

et al. 2011

Semiconductor-on-Insulator Materials for Nanoelectronics Applications

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Confined VLS growth and structural characterization of silicon nanoribbons

Cited by 7 publications

References 8 publications

Confinement-Guided Shaping of Semiconductor Nanowires and Nanoribbons: “Writing with Nanowires”

Confinement-Guided Shaping of Semiconductor Nanowires and Nanoribbons: “Writing with Nanowires”

Effects of Au catalyst geometry on Ge films grown laterally on Si using the vapor–liquid–solid mechanism

Confined and Guided Vapor–Liquid–Solid Catalytic Growth of Silicon Nanoribbons: From Nanowires to Structured Silicon-on-Insulator Layers

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