2010
DOI: 10.1016/j.mee.2009.11.053
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Confined VLS growth and structural characterization of silicon nanoribbons

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Cited by 7 publications
(3 citation statements)
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“…Additionally, electron backscattered diffraction (EBSD) method was utilized for obtaining the nanowire crystallographic properties at high resolution in similarity to previous studies. A detailed study of our as-prepared nanowire structures shows, Figure , that all the on-wafer grown nanowires have crystalline structures. Clearly, nanowires confined to the nanotunnels can adopt any shape, even sharp at turning angles, without leading to termination of nanowires growth.…”
mentioning
confidence: 77%
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“…Additionally, electron backscattered diffraction (EBSD) method was utilized for obtaining the nanowire crystallographic properties at high resolution in similarity to previous studies. A detailed study of our as-prepared nanowire structures shows, Figure , that all the on-wafer grown nanowires have crystalline structures. Clearly, nanowires confined to the nanotunnels can adopt any shape, even sharp at turning angles, without leading to termination of nanowires growth.…”
mentioning
confidence: 77%
“…Additionally, electron backscattered diffraction (EBSD) method was utilized for obtaining the nanowire crystallographic properties at high resolution 33 in similarity to previous studies. 34−36 A detailed study of our as-prepared nanowire structures shows, Figure 4, that all the on-wafer grown nanowires have crystalline structures.…”
mentioning
confidence: 98%
“…In order to address this challenge, a lateral growth technique has recently been developed to grow thin films on a substrate [14][15][16][17][18]. Lateral thin film growth is similar to traditional nanowire growth because the VLS mechanism is also used in the growth process.…”
Section: Introductionmentioning
confidence: 99%