“…In this process, the binding energy will be greatly enhanced and defects will be formed to become new active sites, and the electrical properties will also be changed due to the decrease in the electron-hole recombination rate. 52 The doped elements can be divided into metal and nonmetal, where the metal dopants include Zn, W, Nb, Fe, Co, Ni, Cu, Ti, V, Ta, Al, and Ga, 45,[53][54][55][56][57][58] and nonmetal dopants include N, Si, B, N, P, and Cl. [59][60][61] However, most doping strategies focus on theoretical calculations based on density functional theory (DFT), [62][63][64][65] where theoretical results reveal that doped-MoS 2 sensors exhibit a higher adsorption energy, stronger noncovalent interaction, greater carrier transport number, and faster conductivity rate to target gases.…”