At very large tilt of the magnetic (B) field with respect to the plane of a two-dimensional electron system the transport in the integer quantum Hall regime at ν = 4, 6, and 8 becomes strongly anisotropic. At these filling factors the usual deep minima in the magneto-resistance occur for the current flowing perpendicular to the in-plane B field direction but develop into strong maxima for the current flowing parallel to the in-plane B field. The origin of this anisotropy is unknown but resembles the recently observed anisotropy at half-filled Landau levels.Strongly correlated electronic systems often exhibit stripe phases [1]. In two-dimensional electron systems (2DES) such a stripe phase is believed to be at the origin of the recently observed electronic transport anisotropy at half-fillings of high Landau levels [2-8]. At Landau level filling factors ν = 9/2, 11/2, 13/2, etc. the magneto-resistance is a maximum along one current direction, whereas it is a minimum when the current direction is rotated by 90 • within the plane of the sample. In a purely perpendicular magnetic field (B) the direction of anisotropy is pinned to the crystal lattice [3,4], but re-orients itself when an in-plane B field (B ip ) is added by tilting the sample. At large B ip the easy-axis of anisotropy in the plane of the sample (the direction of minimum resistance) is always perpendicular to B ip [5,6]. Although the nature of this anisotropy remains uncertain, experimental data [2-8] and theoretical models [9][10][11][12][13][14][15][16][17][18][19][20][21] point to the formation of a unidirectional charge density wave, often referred to as the "stripe phase", or to a state akin to a liquid crystal phase [11]. A very similar anisotropy is also observed at ν = 5/2 and ν = 7/2 in the second Landau level under large B ip [5,6]. Modeling [22] suggests that an electronic anisotropic phase, not unlike the one at half-fillings of higher Landau levels, has been induced by the in-plane B field.So far, anisotropy has only been observed at half-filled Landau levels. In this letter, we present data that show strong electronic transport anisotropies at fully filled Landau levels. They are created by the very strong inplane B fields at very large tilt in the regime of the integral quantum Hall effect (IQHE) at ν = 4, 6, and 8. The origin of these anisotropies is unknown, although, phenomenologically, they resemble the anisotropies at halffilled Landau levels: the magneto-resistance is a minimum when the current is perpendicular to B ip and a maximum when the current is along B ip . A striped spin density wave phase may be at the origin of these new observations.Our sample consists of a 350Å wide GaAs quantum well embedded into Al .24 Ga .76 As and delta-doped from both sides at a distance of 490Å. The specimen has a size of 5mm × 5mm and is contacted via eight indium contacts placed symmetrically around the perimeter. The electron density is established after illuminating the sample with a red light-emitting diode at ∼ 4.2K and, within limits, the ...