Conductivity Study of Nitrogen-Doped Magnesium Zinc Oxide Prepared by Spray Pyrolysis

Lin, Tzu-Yang; Hsu, Yu-Ting; Chen, Lung-Chien; Wang, Mu‐Chun; Hsu, Wei-Hsuan; Lee, Chun-Yi; Huang, Soon-Cen; Ding, Yu-Xuan; Huang, Kai-Feng; Lan, Wen−How

doi:10.1166/mat.2015.1243

Cited by 3 publications

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“…As the Er (III) doping in ZnO and MgZnO (II-VI) shows an n-type contributor, sufficient Er doping could imply that the depletion width decreased with the increase of n-type concentration. On the other hand, the N shows p-type doping in ZnO [18] and MgZnO [19]. The N doping in the Er content pn diode may compensate for the electron concentration and for the extending of the depletion width of the diode.…”

Section: Introductionmentioning

confidence: 99%

On the Nitrogen Doping in Erbium and Nitrogen Codoped Magnesium Zinc Oxide Diode by Spray Pyrolysis

et al. 2020

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Diodes with an erbium and nitrogen codoped magnesium zinc oxide (MgZnO:Er,N) active layer were fabricated by spray pyrolysis on Si substrate with aqueous solutions including magnesium nitrate, zinc acetate, erbium acetate, ammonium acetate, and indium nitrate precursors. Diodes with different nitrogen content in their precursor were prepared and their properties were investigated. With scanning electron microscopy, film surface with mixed hexagonal flakes and tiny blocks was characterized for all samples. Certain morphologies varied for samples with different N contents. In the photoluminescence analyses, the intensity of the oxygen-related defects peak increased with the increasing of nitrogen content. The diodes were fabricated with an Au and In deposition on the top and backside. The diode current–voltage as well as capacitance–voltage characteristics were examined. An ununiformed n-type concentration distribution with high concentration near the interface in the MgZnO:Er,N layer was characterized for all samples. Diodes with high nitrogen content exhibit reduced breakdown voltage and higher interface concentration characteristics. Under reversed bias conditions with an injection current of 50 mA, a light spectrum with two distinct green emissions around wavelengths 532 and 553 nm was observed. A small spectrum variation was characterized for diodes prepared from different nitrogen content. The diode luminescence characteristics were examined and the diode prepared from N/Zn=1 in the precursor showed an optimal injection current-to-luminescence property. The current and luminescence properties of the diode were characterized and discussed.

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Section: Introductionmentioning

confidence: 99%