2006
DOI: 10.1063/1.2356999
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Conductivity scaling with bundle length and diameter in single walled carbon nanotube networks

Abstract: Transparent single walled carbon nanotube ͑SWNT͒ networks were printed on plastic substrates. Nanotubes in the network form small bundles, and the authors evaluated the dc conductivity ͑ dc ͒ as a function of the average bundle length ͑L av ͒ in the network. They find dc to vary as dc ϳ L av 1.46 for bundles of the same diameter and give a qualitative argument for why this agrees with a model where the resistance between SWNT bundles dominates the overall network resistance.

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Cited by 304 publications
(289 citation statements)
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“…Moreover, it is also clear that higher network conductance values are achieved when the film is composed of nanotubes with larger aspect ratios. The dependence of the film conductance on the aspect ratio of individual nanotubes is in agreement with previous experimental studies [31,32]. One possible way to account for this trend is to consider that, on average, a longer nanotube will have a larger distance between its junctions with other tubes.…”
Section: Multiscale Model Of Cnt Networksupporting
confidence: 77%
“…Moreover, it is also clear that higher network conductance values are achieved when the film is composed of nanotubes with larger aspect ratios. The dependence of the film conductance on the aspect ratio of individual nanotubes is in agreement with previous experimental studies [31,32]. One possible way to account for this trend is to consider that, on average, a longer nanotube will have a larger distance between its junctions with other tubes.…”
Section: Multiscale Model Of Cnt Networksupporting
confidence: 77%
“…This latter phenomenon is not unexpected. Hecht et al 21 recently predicted that the conductivity of thin NT film should scale approximately as 1 / D 2 , a result based on an analysis of the dependence of the number of junctions in a system on the level of bundling.…”
Section: A Film Characterizationmentioning
confidence: 99%
“…The use of enriched metallic SWNT populations and purification through ultracentrifugation inevitably result in good electrical performance of SWNT networks through minimising both the semiconductor-metal junction density and disorder [7]. The high inter-bundle contact resistance is the main obstacle to enhancement of the electrical performance of SWNT networks [5,6]. Inter-bundle contact resistances can be minimised by careful removal of residual surfactant [11].…”
Section: Introductionmentioning
confidence: 99%
“…Consequently there are large energy barriers at metal-semiconductor interfaces and disorder is introduced by the impurities and processing. Therefore, both the electrical transport within the bundle and the inter-bundle contact resistance has greatest influence on the electrical transport within the network as a whole [5,6]. Solution processing typically requires the use of surfactants which can adversely impact on inter-tube resistance.…”
Section: Introductionmentioning
confidence: 99%