Conductivity of Se95As5 chalcogenide glassy semiconductor layers containing the EuF3 rare-earth impurity in high electric fields

Isayev, A. I.; Мехтиева, С. И.; Garibova, S. N.; Zeynalov, V. Z.

doi:10.1134/s1063782612090102

Cited by 3 publications

(1 citation statement)

References 14 publications

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“…В хàльêогеíèдíых стеêлообðàзíых полупðоводíèêàх (ÕÑП), облàдàющèх отðèцàтельíой дèффеðеíцèàльíой пðоводèмостью S-тèпà, об- íàðужеí ðяд свойств, сðедè êотоðых особое место зàíèмàет элеêтðèчесêàя íеустойчèвость, сопðовождàющàяся èзмеíеíèем фàзового состояíèÿ мàòåðèàëà [3], чòî ïðîÿâëÿåòñÿ â ðåзêîм è быстðом пеðеходе состояíèя стðуêтуðы èз высоêоомíого в íèзêоомíое. Сопðотèвлеíèе èзмеíяется íà мíого поðядêов (10 3 -10 6 ðàз) [4], à вðемя пеðеêлючеíèя для ХСП-стðуêтуð ðàзлèчíого стехèометðèчесêого состàвà состàвляет ïðèмåðíî 1,5•10 -10 с. Мèíèàтюðíость дèодíых ХСП-стðуêтуð позволяет èспользовàть èх для êоðотêоволíовой чàстè мèллèметðового дèàпàзоíà [5]. Одíàêо дàже пðè íàложеíèè стèðàющего èмпульсà дèод остàется в íèзêоомíом состояíèè èз-зà пðèсущего ХСП-мàтеðèàлàм эффеêту пàмятè (удеðжàíèе èíжеêтèðовàííых íосèтелей в СВЧ-поле, сíèжеíèе веðоятíостè èх выходà èз àêтèвíой зоíы è, следовàтельíо, зàтðудíеíèе пðоцессов деполяðèзàцèè, ведущèх ê восстàíовлеíèю èсходíого высоêоомíого состояíèя).…”

Section: двóхканальный переключатель свч-мощности на основе электричеunclassified

Two-channel microwave power switch construction on the basis of electrically active semiconductor structures

et al. 2014

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When constructing the fast-acting two-channel microwave switch, it is difficult to use p–i–n-diodes due to inertia of processes in such structures at change of control voltage polarity for providing of deep modulation. Under the practical realization of the microwave switches on p—i—n-diodes, the requirements to the operating speed of the output signal and to the frequency range are in conflict with each other. The optimum decision may be to use the bulk (without p—n-junctions) two-electrode semiconductor structures based on the effect of intervalley transfer of electrons (TEDs) and chalcogenide-glass-semiconductors (CGS-diodes) with high operating speed and stability at considerable power levels in the wide frequency band. The paper presents the construction of the two-channel microwave switch in the three-centimeter range of wave lengths based on bulk semiconductor structures having negative differential conductivity (NDC) of N- and S-type, and realizing the functions of peak power modulator on a TED-diode and the switch on a CGS-diode respectively.

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Section: двóхканальный переключатель свч-мощности на основе электричеunclassified

Two-channel microwave power switch construction on the basis of electrically active semiconductor structures

et al. 2014

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Determination of the parameters of diffusion and unsteady filament currents in a cylindrical chalcogenide glassy semiconductor

Sovtus

Mynbaev

2020

J. Phys.: Conf. Ser.

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For the Ge-Sb-Te system, the heat equation describing the current filament in the cylindrical semiconductor plate is approximately solved. The scale of the lateral current flowing perpendicular to the filament is estimated. It is shown that for the infinitely long times, the current in the filament is proportional to the square of the maximum temperature at the centre of the filament and inversely proportional to the applied electric field. It is established that the lateral current is small as compared to the current flowing in the filament, so the occurrence of lateral filaments growing from the main filament is unlikely.

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Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor

Sovtus

Mynbaev

2019

Semiconductors

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Conductivity of Se95As5 chalcogenide glassy semiconductor layers containing the EuF3 rare-earth impurity in high electric fields

Cited by 3 publications

References 14 publications

Two-channel microwave power switch construction on the basis of electrically active semiconductor structures

Two-channel microwave power switch construction on the basis of electrically active semiconductor structures

Determination of the parameters of diffusion and unsteady filament currents in a cylindrical chalcogenide glassy semiconductor

Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor

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