Conductivity of La0.7Sr0.3MnO3 − δ films with small deviations from stoichiometry with respect to oxygen

Switching mechanism of Al/La1−xSrxMnO3 resistance random access memory. I. Oxygen vacancy formation in perovskites

“…However, LSMO and other perovskite manganites 54 are in fact the most studied materials for colossal magnetoresistance 55,56 and they are known to exhibit sharp metal-to-insulator transitions upon oxygen deciency: [57][58][59][60][61] they exhibit both colossal magnetoresistance and colossal electroresistance. 40 We therefore speculate that the sensitive oxygen-vacancy-induced variation of resistivity in bulk LSMO perovskites could also be (a part of) the origin of the bipolar resistive switching of their junctions with reactive metals (Al/LSMO, for example).…”

Evidence of the Griffiths phase in multiferroic BiMnO3 and BiFe0.5Mn0.5O3 films

“…The films were prepared by rf magnetron sputtering at a substrate temperature of 650 °C [19]. To avoid the influence of lattice strain, accumulated during deposition, the all films were annealed at 900 °C for 2 h in air.…”

Effect of oxygen content "stabilization" in La-=SUB=-0.8-=/SUB=-Sr-=SUB=-0.2-=/SUB=-MnO-=SUB=-3-delta-=/SUB=- films at post annealing in air

“…With the development of various film manufacturing technologies, the heat treatment conditions were selected empirically, and the authors of the articles gave recommendations to obtain certain film characteristics [1][2][3][4]. Nevertheless, the correct choice of heat treatment conditions to ensure the stoichiometric oxygen content (OC = 3) in films of different thicknesses, in contrast to single crystals [5][6][7], turned out to be a very difficult task.…”