2014
DOI: 10.1088/0953-8984/27/2/025503
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Conductivity and magnetoresistance of La0.7Ce0.3MnO3−δthin films under photoexcitation

Abstract: Abstract. La 0.7 Ce 0.3 MnO 3 thin films of different thicknesses, degrees of CeO 2 -phase segregation and oxygen deficiency, grown on SrTiO 3 single crystal substrates, were comparatively investigated with respect to both their spectral and temperaturedependent photoconductivity (PC) and their magnetoresistance (MR) behaviour under photoexcitation. While as-grown films were insensitive to optical excitation, oxygen reduction appeared to be an effective way to decrease the film resistance, but the film thickne… Show more

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Cited by 3 publications
(3 citation statements)
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References 31 publications
(63 reference statements)
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“…As visible in figure 2(b), in the whole temperature range investigated here, the resistance at 5 V is clearly lower than at 1 V. Furthermore, at 5 V, an MIT appears at 135 K. Being beyond the scope of the present work, the clarification of the origin of this electrical-field induced MIT (intrinsic to the film or substrate-related) by comparative magnetoresistance investigations is currently in progress [42]. Note that the electroresistive effect turned out to be non-persistent and was observed solely in sample D.…”
Section: Resultsmentioning
confidence: 71%
“…As visible in figure 2(b), in the whole temperature range investigated here, the resistance at 5 V is clearly lower than at 1 V. Furthermore, at 5 V, an MIT appears at 135 K. Being beyond the scope of the present work, the clarification of the origin of this electrical-field induced MIT (intrinsic to the film or substrate-related) by comparative magnetoresistance investigations is currently in progress [42]. Note that the electroresistive effect turned out to be non-persistent and was observed solely in sample D.…”
Section: Resultsmentioning
confidence: 71%
“…Interestingly -and indeed electroresistive effects in LCeMO were reported in the past [41] -the resistance of film D strongly depends on the measuring voltage. As visible in figure 2(b), in the whole temperature range investigated here, the resistance at 5 V is clearly lower than at 1 V. Furthermore, at 5 V, an MIT appears at 135 K. Being beyond the scope of the present work, the clarification of the origin of this electrical-field induced MIT (intrinsic to the film or substrate-related) by comparative magnetoresistance investigations is currently in progress [42]. Note that the electroresistive effect turned out to be non-persistent and was observed solely in sample D.…”
Section: Resultsmentioning
confidence: 71%
“…To remove this excess and to reduce the oxygen concentration further, high‐temperature annealing in ultrahigh vacuum (e.g., 10 −9 hPa at 700 °C) can be employed for several hours. As a result, the conductivity can be varied by orders of magnitude, the insulator‐to‐metal transition upon cooling can be suppressed, and new features arise including photoconductivity and electro‐resistive effects .…”
Section: Preparation Methods For Perovskitesmentioning
confidence: 99%