Conductivity and distribution of charge on electroluminescent Si/SiO2 structures investigated by electrostatic force microscopy

Suominen, T.; Paturi, P.; Huhtinen, H.; Heikkilä, L.; Hedman, Hannu‐Pekka; Punkkinen, Risto; Laiho, R.

doi:10.1016/j.apsusc.2003.08.004

Cited by 3 publications

(2 citation statements)

References 42 publications

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“…Many top characterization techniques have been applied, such as the morphological tools ͓transmission electron microscopy ͑TEM͒, 7,37,38 atomic force microscopy, 5,39 and electrostatic force microscopy 39 ͔, in combination with small angle x-ray scattering 40 and optical measurements, mainly PL. Theory, experiment, and technology collaborate with the intent of understanding the optical processes that take place and make more efficient and industry friendly optically active Si-based materials.…”

Section: Inherent Paramagnetic Defects In Layered Si/ Sio 2 Superstrumentioning

confidence: 99%

“…Efficient PL Si NPs, generally crystalline, embedded in SiO 2 can be fabricated through a variety of methods, including ͑oxidation of͒ porous ͑p͒ Si, 47 chemical vapor deposition, 39 the rf cosputtering method, 19 plasma chemical deposition, 16 Si + implantation in high purity SiO 2 , 48,49 and so forth. Yet, major problems these techniques suffer from include the lack of tight and, in particular, density independent control of the NPs size, the control of the inter-NP distance and prevention of particles agglomeration.…”

Section: Inherent Paramagnetic Defects In Layered Si/ Sio 2 Superstrumentioning

confidence: 99%

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Inherent paramagnetic defects in layered Si/SiO2 superstructures with Si nanocrystals

Jivānescu

Stesmans

Zacharias³

2008

Journal of Applied Physics

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An extensive electron spin resonance ͑ESR͒ analysis has been carried out on structures comprised of Si nanoparticles ͑ϳ2 nm across͒ embedded in a regular pattern in an amorphous SiO 2 matrix, fabricated by the SiO/ SiO 2 superlattice approach, with the intent to reveal and quantify occurring paramagnetic defects. The as-grown state is found to exhibit only a Si dangling bond ͑DB͒ signal, which through combination of first and second harmonic X-, K-, and Q-band observations in combination with computer spectra simulation, could be conclusively disentangled as solely comprised of overlapping powder pattern spectra of P b͑0͒ and P b1 defects, the archetypal intrinsic defects of the Si/ SiO 2 interface, with no evidence for a D line ͑Si DBs in disordered Si͒. This indicates a full crystalline system of randomly oriented Si nanocrystals ͑NCs͒. The P b͑0͒ / P b1 defect system, pertaining to the NC-Si/ SiO 2 interfaces, is found to be both qualitatively and quantitatively much alike that of standard ͑high-quality͒ thermal Si/ SiO 2 . The system is inherent, remaining unaffected by subsequent UV/vacuum UV irradiations. Relying on the known properties of P b -type defects in standard microscopic Si/ SiO 2 , the data would comply with Si nanocrystallites, in average, predominantly bordered by ͑111͒ and ͑100͒ facets, perhaps with morphology, schematically, of ͓100͔ truncated ͑111͒ octahedrons. Based on independent NC particles counting, there appears a P b -type center at ϳ71% of the Si NCs indicating the latter to be comprised of two subsystems-with or without an incorporated strain relaxing interface defect-which in that case will exhibit drastically different defect-sensitive properties, such as, e.g., photoluminescence ͑PL͒. Upon additional optical irradiation, two more defects appear, i.e., the SiO 2 -associated E ␥ Ј and EX centers, where the observed density of the former, taken as criterion, indicates the SiO 2 matrix to be of standard thermal oxide quality. Thus, the properties of the revealed crucial intrinsic point defects bear out a high quality of both the NC-Si/ SiO 2 interfaces and the embedding SiO 2 , alike that of standard thermal Si/ SiO 2 . In combination with H passivation/depassivation treatments, the degrading impact of the optical excitation ͑ϳ360 nm͒ itself used during PL measurements has been studied, revealing weak ESR reactivation of P b͑0͒ , P b1 , and E ␥ Ј defects.

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Section: Inherent Paramagnetic Defects In Layered Si/ Sio 2 Superstrumentioning

confidence: 99%

Section: Inherent Paramagnetic Defects In Layered Si/ Sio 2 Superstrumentioning

confidence: 99%

Inherent paramagnetic defects in layered Si/SiO2 superstructures with Si nanocrystals

Jivānescu

Stesmans

Zacharias³

2008

Journal of Applied Physics

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Paramagnetic point defects at SiO2/nanocrystalline Si interfaces

Stesmans

Jivānescu

Godefroo

et al. 2008

Applied Physics Letters

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A K- and Q-band electron spin resonance study, combining two detection modes, on structures composed of Si nanoparticles (∼2nm across) embedded in a SiO2 matrix obtained by annealing of SiO∕SiO2 superstructures unveils the observed principal Si dangling bond signal as solely comprised of the intrinsic Pb(0) and Pb1 Si∕SiO2 interface defect spectra, of comparable densities. Based on independent particle density counting, about one Pb-type defect is found at every 1.4 Si nanoparticles. Relying on the known properties of Pb-type defects in standard microscopic Si∕SiO2, the data would comply with Si nanocrystallites with morphology, schematically, of [100] truncated (111) octahedrons. Both types and densities of observed point defects indicate a structure of quality much alike that of standard thermal Si∕SiO2.

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Luminescence of ion-irradiated α-quartz

Lieb

Keinonen

2006

Contemporary Physics

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Conductivity and distribution of charge on electroluminescent Si/SiO2 structures investigated by electrostatic force microscopy

Cited by 3 publications

References 42 publications

Inherent paramagnetic defects in layered Si/SiO2 superstructures with Si nanocrystals

Inherent paramagnetic defects in layered Si/SiO2 superstructures with Si nanocrystals

Paramagnetic point defects at SiO2/nanocrystalline Si interfaces

Luminescence of ion-irradiated α-quartz

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