Conductive metallic filaments dominate in hybrid perovskite-based memory devices

Abstract

Organic−inorganic hybrid perovskites (OHPs) are well-known as light-absorbing materials in solar cells and have recently attracted considerable attention for the applications in resistive switching memory. Previous studies have shown that ions can migrate to form a conductive channel in perovskites under an external voltage. However, the exact resistance mechanism for Ag or halogens which dominate the resistive behavior is still controversial. Here, we demonstrate a resistive switching memory device based on Ag/FA 0.83 MA 0.17 Pb(I 0.82 Br 0.18) 3 /fluorine doped tin oxide (FTO). The migration of Ag cations and halide anions is demonstrated by energy dispersive X-ray spectroscopy (EDS) after the SET process (positive voltage on Ag). By comparing the I-V behavior of the Au-based devices, it is clear that the conductive channel formed by Ag is the main factor of the switching characteristics for Ag-based devices. Meanwhile, by controlling the appropriate SET voltage, two kinds of resistance characteristics of the analog switch and threshold switch can be realized in the Ag-based device. As a result, it may be possible to implement both data storage and neuromorphic computing in a single device.

Advanced partial nucleation for single-phase FA0.92MA0.08PbI3-based high-efficiency perovskite solar cells

“…PL maps with emission wavelengths of 800-810 nm for MCP-FA 0.92 MA 0.08 and 715-815 nm for Tra-FA 0.9 -MA 0.1 are presented in Fig. 6c, d, respectively [8,44]. For the MCP-FA 0.92 MA 0.08 film, the range in the main PL peak was wide, which proved the absence of the second phase.…”

Resistive Switching Property of Organic–Inorganic Tri-Cation Lead Iodide Perovskite Memory Device

“…It means that high stability of defects was critical for better endurance. Z. Xu et al have indicated that the small radius of Cs + is able to help the hindering of I − movement in two respects [ 32 ]. On one hand, the incorporation of Cs + in the perovskites results in cell lattice shrinkage, which thus requires a higher activation energy for I − hopping.…”

“…In particular, the greatest potential of ReRAM is that many switching materials could be selected. Recently, in addition to its photovoltaic applications, organic–inorganic metal halide perovskite has been demonstrated as an active layer in ReRAM cells, showing tunable and remarkable memory properties and flexibility [ 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 ]. Based on the various material systems of perovskite, the constituent tuning provides an influential factor in controlling the memory property; [ 34 ] but most of the research about the memory application of the three-dimensional (3D) perovskites is still focused on MAPbI 3 [ 22 , 23 , 25 , 27 , 28 , 29 , 30 ].…”

“…Z. Xu et al have investigated the effects of defects and hysteresis properties of the FA 0.9 Cs 0.1 PbI 3 memory [ 24 ]. Y. Huang et al reported the research of the conduction mechanism in FA 0.83 MA 0.17 Pb(I 0.82 Br 0.18 ) 3 memory device [ 32 ], but neither of them discuss the influence of cations in perovskite on the memory property of devices. In this work, a ReRAM with a tri-cation-based perovskite active layer, using a mixture of FA and MA as the monovalent cation, with the addition of inorganic Cs, was developed.…”

Resistive-switching tunability with size-dependent all-inorganic zero-dimensional tetrahedrite quantum dots

“…In light of this information, it is evident that large differences exist in the resistive-switching properties of different switching materials. Unfortunately, the intrinsic mechanism behind the resistive-switching behavior of all-inorganic QDbased RRAM devices is yet to be determined, though some mechanisms have been suggested, such as filamentary conduction [29,30] and charge trapping and detrapping [31]. Therefore, extensive studies should be conducted concerning the resistive-switching properties of memory devices based on all-inorganic QDs, especially with respect to developing new switching materials and establishing an intrinsic mechanism to provide a practical solution for commercialization.…”