Abstract:The electrical stress behaviour of non-irradiated and irradiated (2 to 7-nm thick) SiO 2 /Si structures is investigated using conductive-atomic force microscopy. A protocol based on the successive application of two rampedvoltage stresses (RVS) on each test point is performed. The environmental implementation conditions of such an experiment are then investigated. A statistical approach based on the use of Weibull distributions is also adopted. Before irradiation, for the thinnest samples, it is shown evidence… Show more
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