Conductive and semi-transparent Cu thin film fabricated using molecular precursor solutions

Nagai, Hiroki; Mita, Seiji; Takano, Ichiro; Honda, Toshio; Sato, Mitsunobu

doi:10.1016/j.matlet.2014.11.056

Cited by 14 publications

(10 citation statements)

References 17 publications

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“…It is notable that the reflectance of F" mix approaches over 90% in the far-infrared region (Figure 4). In our previous work [10], we reported the fabrication of a Cu thin film, whose reflectance approaching nearly 100% in the identical region, with a thickness of 100 nm and an electrical resistivity of 1.8 × 10 -5 Ω cm. The thin film was fabricated by a spin coating of an ethanol solution and two-step heat treatment.…”

Section: Influence Of the Cu(ii) Complexes In The Coating Solution Onmentioning

confidence: 99%

“…The molecular precursor method (MPM) is an effective, wet chemical process for thin film fabrication of various metal oxides and phosphates that was developed in our laboratory [9]. The fabrication of a conductive and semi-transparent Cu thin film using MPM was recently reported [10]. Additionally, a highly conductive and void-free metallic Cu thin-film was successfully embedded into submicrometer trenches in a silicon substrate using a modified molecular precursor solution [11].…”

Section: Introductionmentioning

confidence: 99%

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Highly-Conductive and Well-Adhered Cu Thin Film Fabricated on Quartz Glass by Heat Treatment of a Precursor Film Obtained Via Spray-Coating of an Aqueous Solution Involving Cu(II) Complexes

et al. 2018

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A Cu thin film on a quartz glass substrate was fabricated by a wet process involving heat-treatment of a precursor film spray-coated with an aqueous ammonia solution containing Cu(HCOO)2∙4H2O and Cu(II) complex of ethylenediamine-N,N,N′N′-tetraacetic acid. The precursor film that formed on the substrate at 180 °C in air was heat-treated at 350 °C and post annealed at 400 °C by placing an identical-sized glass on top, under Ar gas flow in a tubular furnace. X-ray diffraction pattern of the resultant film showed only peaks of Cu. The resultant film of 100 nm thickness has an adhesion strength and electrical resistivity of 37(7) MPa and 3.8(6) × 10−5 Ω cm, respectively. The images of atomic force and field-emission scanning-electron microscopies revealed a film of well-connected Cu grains with an average surface roughness of 11 nm. The reflectance of the thin film is more than 90% in the far-infrared region. The film’s chemical composition was also examined by using Auger electron spectroscopy.

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Section: Influence Of the Cu(ii) Complexes In The Coating Solution Onmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Highly-Conductive and Well-Adhered Cu Thin Film Fabricated on Quartz Glass by Heat Treatment of a Precursor Film Obtained Via Spray-Coating of an Aqueous Solution Involving Cu(II) Complexes

et al. 2018

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“…However, the intermediate Cu thin ilm obtained through the reaction using the precursor ilm is not electrically conductive. Therefore, in order to fabricate transparent metal copper thin ilms, we examined novel precursor solutions [35,36]. A novel precursor solution containing a Cu .…”

Section: Fabrication Of Copper Thin Ilmsmentioning

confidence: 99%

Molecular Precursor Method for Fabricating p-Type Cu2O and Metallic Cu Thin Films

Nagai¹,

Sato²

2017

Modern Technologies for Creating the Thin-Film Systems and Coatings

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Functional thin ilms are used in various ields of our life. Many diferent methods are used to fabricate these ilms including physical vapor deposition (PVD) and chemical processes. The chemical processes can be used to manufacture thin ilms in a relatively cheap way, as compared to PVD methods. This chapter summarizes the procedures of the molecular precursor method (MPM), a chemical process, for fabrication of both metal oxide semiconductor Cu 2 O and metallic Cu thin ilms by utilizing Cu(II) complexes in coating solutions. The MPM, recently developed and reported by the present authors, represents a facile procedure for thin ilm fabrication of various metal oxides or phosphates. This method pertinent to the coordination chemistry and materials science including nanoscience and nanotechnology has provided various thin ilms of high quality. The MPM is based on the design of metal complexes in coating solutions with excellent stability, homogeneity, miscibility, coatability, etc., which are practical advantages. The metal oxides and phosphates are useful as the electron and/or ion conductors, semiconductors, dielectric materials, etc. This chapter will describe the principle and recent achievement, mainly on fabricating the p-type Cu 2 O and metallic Cu thin ilms of the MPM.

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“…These materials were fabricated on a fluorinated-tin-oxide (FTO) pre-coated glass substrate using the molecular precursor method (MPM) [1]. The MPM is one of the wet chemical processes, which was developed in our group for fabricating thin films of various metals, metal oxides, and phosphate compounds [1][2][3][4][5][6][7][8][9][10][11][12][13]. This method has many advantages, such as excellent stability, homogeneity, miscibility, and compatibility.…”

Section: Introductionmentioning

confidence: 99%

Photovoltaic Lithium-ion Battery with Layer-Structured Li2MnIII0.2MnIV0.8O2.9 Thin Film Chemically Fabricated for Cathodic Active Material

2020

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Dilithium manganese oxide (LMO) thin film was newly fabricated as an active material on a fluorinated-tin-oxide pre-coated glass electrode by a wet process. A stable LMO precursor solution was developed through the reaction of lithium and manganese acetates with butylamine in ethanol. A spin-coated precursor film was heat-treated at 500 °C in air for 0.5 h. The X-ray diffraction pattern indicates that the resultant film consists of layer-structured LMO crystals. The X-ray photoelectron spectra of LMO thin film suggests that the ratio of Mn3+/Mn4+ is 1/4, and the chemical formula can be expressed as Li2MnO2.9. A device was assembled with O-deficient LMO and TiO2 thin films as each active material, along with an electrolytic solution involving LiPF6. The charging voltages (2.67 and 1.45 V) of this device were recorded by applying a constant current of 0.2 mA and using 1-sun irradiation with no external power supply, respectively. The voltages delivered by this cobalt-free device were 0.63 and 0.13 V higher, respectively, than the corresponding device assembled with lithium cobalt oxide as a cathodic active material.

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Conductive and semi-transparent Cu thin film fabricated using molecular precursor solutions

Cited by 14 publications

References 17 publications

Highly-Conductive and Well-Adhered Cu Thin Film Fabricated on Quartz Glass by Heat Treatment of a Precursor Film Obtained Via Spray-Coating of an Aqueous Solution Involving Cu(II) Complexes

Highly-Conductive and Well-Adhered Cu Thin Film Fabricated on Quartz Glass by Heat Treatment of a Precursor Film Obtained Via Spray-Coating of an Aqueous Solution Involving Cu(II) Complexes

Molecular Precursor Method for Fabricating p-Type Cu2O and Metallic Cu Thin Films

Photovoltaic Lithium-ion Battery with Layer-Structured Li2MnIII0.2MnIV0.8O2.9 Thin Film Chemically Fabricated for Cathodic Active Material

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