2018
DOI: 10.1016/j.jpcs.2018.03.003
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Conduction type control and power factor enhancement of the thermoelectric material Al2Fe3Si3

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Cited by 18 publications
(38 citation statements)
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“…As shown in the inset of Figure 8(d), the temperature dependence of κ ph from 150 K to 300 K was proportional to 1/T, which suggested that Umklapp scattering played the main role in the decrease of κ ph . One can compare the thermoelectric properties of t-FeAl 2 with those of other intermetallic thermoelectrics, Fe 2 VAl [38][39][40][41][42] and Al 2 Fe 3 Si 3 [43][44][45][46]. The κ ph of t-FeAl 2 was several times larger than that of Al 2 Fe 3 Si 3 .…”
Section: Thermoelectric Properties Of Fealmentioning
confidence: 99%
“…As shown in the inset of Figure 8(d), the temperature dependence of κ ph from 150 K to 300 K was proportional to 1/T, which suggested that Umklapp scattering played the main role in the decrease of κ ph . One can compare the thermoelectric properties of t-FeAl 2 with those of other intermetallic thermoelectrics, Fe 2 VAl [38][39][40][41][42] and Al 2 Fe 3 Si 3 [43][44][45][46]. The κ ph of t-FeAl 2 was several times larger than that of Al 2 Fe 3 Si 3 .…”
Section: Thermoelectric Properties Of Fealmentioning
confidence: 99%
“…13 We reported that the Fe 3 Al 2 Si 3 phase would be suited for thermoelectric materials because they form a narrow band gap near the Fermi level, 8 and the Al/Si ratio could tune the conduction type of n-and p-type for Fe 3 Al 2 Si 3 alloys. 10 Shiota et al reported the thermoelectric properties of Fe 3 Al 2 Si 3 materials and the effects of Co-and Mn-substitutions for Fe on the thermoelectric properties to obtain n-and p-type materials. 9,11 We succeeded in enhancing the power factor (∼40%) at mid-temperatures for n-type Fe 3 Al 2 Si 3 thermoelectric materials using a machine-learning method.…”
Section: Introductionmentioning
confidence: 99%
“…The maximum PF of ∼750 μW m −1 K −2 was achieved at 473 K for the sample with x = 4.0, which is the highest among n-type FAST materials. 8,17,18,21,24,27 Compared with undoped FAST samples (Figure S5), the heavily Co-doped samples (x > 3) exhibited much larger σ but lower S because of higher carrier concentration (n) for heavily Co-doped samples increased. However, Co-doped samples did not show a monotonic change in σ with increasing Co content (Figure S2), which may be brought by a decrease in the carrier mobility because of an increase in carrier scattering for higher Co-doped samples.…”
Section: Dopant Concentration Optimizationmentioning
confidence: 99%
“…The calculated absolute values of S at room temperature were greater than 100 μV K −1 for both p-and n-type FAST materials; subsequent experiments confirmed these values. 8,17,21 Note that the TE properties of FAST materials depend on the conditions of the synthesis process, such as the cooling rate from the melt and the annealing conditions, because the τ 1 -phase is produced by a peritectic reaction. The present mass production method (∼kg/batch) of FAST materials combines a powder synthesis process (induction heating and gas atomization methods) and a bulk synthesis process (spark plasma sintering method).…”
Section: Overview Of Fe−al−si Thermoelectric (Fast) Materialsmentioning
confidence: 99%