Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices

Loy, Desmond Jia Jun; Dananjaya, Putu Andhita; Hong, Xiao; Shum, D.; Lew, Wen Siang

doi:10.1038/s41598-018-33198-0

Cited by 33 publications

(18 citation statements)

References 41 publications

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“…The electrical conduction of the Ag/(PEA) 2 Cs 3 Pb 4 I 13 /Pt memory device differed in the HRS and LRS during the SET operation under a voltage sweep of 0 V → +0.8 V → 0 V. First, it was found that the ohmic conduction plot had a slope of 0.99, with a linear relation of ln I vs. ln V in the LRS region after the abrupt current increase 23,[52][53][54] . In the HRS region, the relation of ln I vs. ln V was nonlinear with a slope of 0.26, which verifies that Schottky emission is dominant 23,53,55 . To better understand the two types of electrical conduction mechanisms, i.e., ohmic conduction in the LRS and Schottky emission in the HRS, the I-V curves of each resistance state were replotted with linear fitting lines.…”

Section: Resultsmentioning

confidence: 60%

“…To further clarify whether Schottky emission is dominant in the HRS region during the SET operation, the nonlinear I-V curve of the HRS was replotted as ln I vs. the square root of the applied voltage (ln I ∝ V 1/2 ), as illustrated in Fig. 5c 52,55,56 . The fitting result shows a linear relationship of ln I ∝ V 1/2 , which can be taken as evidence that Schottky emission is dominant in the HRS region, according to the following equation: 23 ln…”

Section: Resultsmentioning

confidence: 99%

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Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

et al. 2020

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Resistive random-access memory (ReRAM) devices based on halide perovskites have recently emerged as a new class of data storage devices, where the switching materials used in these devices have attracted extensive attention in recent years. Thus far, three-dimensional (3D) halide perovskites have been the most investigated materials for resistive switching memory devices. However, 3D-based memory devices display ON/OFF ratios comparable to those of oxide or chalcogenide ReRAM devices. In addition, perovskite materials are susceptible to exposure to air. Herein, we compare the resistive switching characteristics of ReRAM devices based on a quasi-two-dimensional (2D) halide perovskite, (PEA) 2 Cs 3 Pb 4 I 13 , to those based on 3D CsPbI 3. Astonishingly, the ON/OFF ratio of the (PEA) 2 Cs 3 Pb 4 I 13-based memory devices (10 9) is three orders of magnitude higher than that of the CsPbI 3 device, which is attributed to a decrease in the high-resistance state (HRS) current of the former. This device also retained a high ON/OFF current ratio for 2 weeks under ambient conditions, whereas the CsPbI 3 device degraded rapidly and showed unreliable memory properties after 5 days. These results strongly suggest that quasi-2D halide perovskites have potential in resistive switching memory based on their desirable ON/OFF ratio and long-term stability.

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Section: Resultsmentioning

confidence: 60%

Section: Resultsmentioning

confidence: 99%

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

et al. 2020

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“…Secondly, Schottky emission also occurs because of thermal activation. When the positive bias is applied to the top Ag electrode, thermally activated electrons receive a sufficient amount of energy to jump from the valence band to the conduction band [30][31][32]. Therefore, it can be concluded that different material devices with diverse geometry and parameters can provide an outcome of conducting filament occurrence conditional to the ion migration rate and redox reaction.…”

Section: Resultsmentioning

confidence: 99%

Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

et al. 2021

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Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO2/WTe2) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over a flexible PET substrate. The Ag/SnO2/WTe2/Au flexible devices exhibited highly stable resistive switching along with an excellent retention time. Triggering the device from a high-resistance state (HRS) to a low-resistance state (LRS) is attributed to Ag filament formation because of its diffusion. The conductive filament begins its development from the anode to the cathode, contrary to the formal electrochemical metallization theory. The bilayer structure of SnO2/WTe2 improved the endurance of the devices and reduced the switching voltage by up to 0.2 V compared to the single SnO2 stacked devices. These flexible and low-power-consumption features may lead to the construction of a wearable memory device for data-storage purposes.

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“…Resistive switching is observed in MgO based structures [ 55 , 56 ]. Ferromagnetism combining with multilevel switching characteristics is also reported in MgO capacitor [ 57 , 58 ].…”

Section: Introductionmentioning

confidence: 99%

Approaches to synthesize MgO nanostructures for diverse applications

Singh

Sharma

et al. 2020

Heliyon

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Magnesium oxide remained interesting from long time for several important phenomena like; defect induced magnetism, spin electron reflectivity, broad laser emission etc. Moreover, nanostructures of this material exhibited suitability for different kinds of applications ranging from wastewater treatment to spintronics depending upon their shape and size. In this way, researchers had grown nanostructures in the form of nanoparticles, thin films, nanotubes, nanowalls, nanobelts. Though nanoparticles and thin films are well known form of nanostructures and wide variety of synthesis approaches are available, however, limited methodology for other nanostructures are available. In order to grow these nanostructures in an optimized way an understanding of these methods is essential. Thus, this review article depicts an overview of various approaches for design of different kinds of nanostructures.

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Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices

Cited by 33 publications

References 41 publications

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109

Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

Approaches to synthesize MgO nanostructures for diverse applications

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