Conduction Mechanism of Se Schottky Contact to n-Type Ge

Janardhanam, V.; Park, Yang-Kyu; Yun, Hyung-Joong; Ahn, Kwang‐Soon; Choi, Chel‐Jong

doi:10.1109/led.2012.2196750

Cited by 22 publications

(19 citation statements)

References 13 publications

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“…(7). However, the relevance of the built-in potentials experimentally determined by Janardhanam et al [1][2][3] and Reddy et al [4][5][6] may be easily checked. The combination of Eqs.…”

Section: Analysis Of Experimental Datamentioning

confidence: 99%

“…In search of metal-semiconductor or Schottky contacts having large barrier heights, Janardhanam et al [1][2][3] and Reddy et al [4][5][6] published a series of articles on electronic properties of interfaces between amorphous and crystalline selenium layers and n-type Ge, Si, and GaN substrates. They selected selenium since it has a photothreshold of 5.9 eV [7], the largest value of all solid chemical elements [8].…”

Section: Introductionmentioning

confidence: 99%

“…However, crystalline as well as amorphous selenium is a ptype semiconductor [9,10]. Janardhanam et al [1][2][3] and Reddy et al [4][5][6] thus fabricated p-Se/n-Ge, p-Se/n-Si, and p-Se/n-GaN heterojunctions rather than Schottky contacts. Therefore, some of their experimental data will be reanalyzed.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the IFIGS-and-electronegativity theory (see Ref. [15] and references cited therein) will be applied to discuss the results of a revised analysis of the C/V data reported by Janardhanam et al [1][2][3] and Reddy et al [4][5][6] with crystalline and amorphous selenium p-n heterojunctions. Their C/ V rather than their I/V data will be considered because the flat-band voltages are not modified by lateral inhomogeneities of the interfaces as was first concluded by Song et al [16] from their studies of Al/p-InP(110) Schottky contacts and later on by Schmitsdorf et al [17] from their detailed investigations of Ag/n-Si(111) Schottky diodes.…”

Section: Introductionmentioning

confidence: 99%

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On selenium p–n heterojunctions and Schottky contacts

Mönch

2014

J Mater Sci: Mater Electron

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Experimental capacitance-voltage data of selenium p-n heterojunctions on n-type Ge, Si, and GaN and flat-band barrier heights of selenium Schottky contacts are reanalyzed. The resulting built-in potentials of the p-n heterojunctions as well as the flat-band barrier heights of the Schottky contacts are explained by the well established concept of interface-induced gap states (IFIGS) where the interfacial electric dipoles are estimated by using the differences of the respective electronegativities. The analysis of the built-in potentials of the heterojunctions between crystalline p-Se films and n-Si and n-GaN substrates give an energy distance of 0.06 eV between the bulk Fermi level and the branch point of the IFIGS. The evaluation of the Schottky barrier heights reveals the IFIGS branch point of crystalline selenium to lie 0.03 ± 0.15 eV above the valence-band maximum. In summary, the valence-band offsets of c-Se/Si and c-Se/ GaN heterostructures are estimated as 0.29 and 2.22 eV, respectively.

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“…(7). However, the relevance of the built-in potentials experimentally determined by Janardhanam et al [1][2][3] and Reddy et al [4][5][6] may be easily checked. The combination of Eqs.…”

Section: Analysis Of Experimental Datamentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

On selenium p–n heterojunctions and Schottky contacts

Mönch

2014

J Mater Sci: Mater Electron

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“…Hence, the barrier height determined from the IV measurement is significantly lower than the weighted arithmetic average of barrier heights extracted from the CV measurement. 21,22) Figure 5 represents the cross-sectional bright field TEM images taken from the Se/n-type Si Schottky contacts with and without RTA processes. All samples showed fairly uniform surface and interface morphologies.…”

Section: Methodsmentioning

confidence: 99%

Effect of Rapid Thermal Annealing on the Electrical and Structural Properties of Se Schottky Contacts to n-Type Si

et al. 2013

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We have investigated the electrical and microstructural properties of Se Schottky contacts to n-type Si before and after rapid thermal annealing (RTA) at temperatures in the range of 100200°C for 30 s under N 2 ambient. The forward and reverse leakage currents increased with increasing RTA temperature following which the barrier heights decreased from 0.71 to 0.60 eV before and after annealing at 200°C. With increasing RTA temperature, the crystallization of the Se film proceeded and the film was fully crystallized after being annealed at 200°C without the reaction between Se film and Si substrate. The decrease in the barrier height of Se Schottky contacts to n-type Si with increasing RTA temperature could be associated with the decrease in series resistance caused by the phase transformation from high resistance amorphous Se to low resistance crystalline Se. An investigation of the reverse currentvoltage characteristics of Se/n-type Si Schottky contacts showed that the Schottky emission mechanism dominates the current transport in the reverse bias at all annealed temperatures in the range of 100200°C.

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Transport mechanisms and interface properties of W/p-InP Schottky diode at room temperature

et al. 2015

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We have investigated the electrical properties and current transport mechanisms of W/p-InP Schottky diode using current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-frequency (G-f) techniques at room temperature. The W/p-InP Schottky diode exhibits a good rectifying behavior. Measurements show that the Schottky barrier height (SBH) and ideality factor of the W/p-InP Schottky diode are 0.84 eV (I-V)/0.98 eV (C-V) and 1.24, respectively. Also, the SBH and series resistance R s of the diode are extracted by Cheung's functions and the values are in good agreement with each other. Ohmic and space charge-limited conduction mechanisms are found to govern the current flow in the W/p-InP Schottky diode at low and high forward bias conditions, respectively. Experimental results reveal that the Poole-Frenkel mechanism is found to be dominant in the reverse bias region of W/p-InP Schottky diode. Further, the interface state density N ss and their relaxation times s of the W/p-InP Schottky diode are estimated from the forward bias C-f and G-f characteristics and the values are in the range from 1.95 9 10 13 eV -1 cm -2 and 3.38 9 10 -5 s at (0.81-E V ) eV to 1.78 9 10 13 eV -1 cm -2 and 2.78 9 10 -6 s at (0.30-E V ) eV, respectively. Both the N ss and s show an exponential rise with bias from the top of the valance band toward the mid gap.

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Conduction Mechanism of Se Schottky Contact to n-Type Ge

Cited by 22 publications

References 13 publications

On selenium p–n heterojunctions and Schottky contacts

On selenium p–n heterojunctions and Schottky contacts

Effect of Rapid Thermal Annealing on the Electrical and Structural Properties of Se Schottky Contacts to n-Type Si

Transport mechanisms and interface properties of W/p-InP Schottky diode at room temperature

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