Conduction in LaCo<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>by small-polaron hopping below room temperature

Iguchi, E.; Ueda, Koji; Jung, Woo-Hwan

doi:10.1103/physrevb.54.17431

Cited by 152 publications

(90 citation statements)

References 63 publications

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“…The resistivity behaviour of pure LaCoO 3 complements well with the previous experimental work where it gradually increases with decreasing temperature like a semiconductor. The conduction in LaCoO3 has been attributed to small polaron hopping mechanism as suggested by the previous works where small polarons of holes are generated by the electron excitation from the narrow p* bands of Low Spin Co (III) to the r* band of the e g orbital of the Co 3d excited states [4,34]. Partial substitution of Al for Co results in increase in the resistivity of the samples.…”

Section: Composition and Morphologymentioning

confidence: 92%

Influence of Al doping in LaCoO3 on structural, electrical and magnetic properties

et al. 2014

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We report investigations on polycrystalline LaCo 1-x Al x O 3 (x = 0-0.9) bulk samples. The solid state synthesized samples showed a coexistence of rhombohedral and monoclinic phases in the intermediate concentrations (0.2 B x B 0.5) and pure rhombohedral phase otherwise. The observed effect of Al doping on dc transport has been analysed on the basis of small polaron hopping mechanism. The magnetisation results presented give evidence of weak ferromagnetism and anomalous temperature dependence of coercivity which we associate to the canting of the localised high-spin Co(III) and anti-symmetric exchange interactions at low temperatures.

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Section: Composition and Morphologymentioning

confidence: 92%

Influence of Al doping in LaCoO3 on structural, electrical and magnetic properties

et al. 2014

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“…It has been reported previously that the activation energy for T Ͼ 110 K in a polycrystal has higher values in the range of 0.15-0.3 eV. 33,47,48 …”

Section: Resultsmentioning

confidence: 99%

Dielectric response to the low-temperature magnetic defect structure and spin state transition in polycrystallineLaCoO3

Schmidt

Leighton

et al. 2009

Phys. Rev. B

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“…In the adiabatic limit the activation energy for small-lattice-polaron ͑Hol-stein͒ motion involves two terms, E A = E g / 2+W H , where E g is the so-called trapping energy or the energy difference between the lattice distortion with and without a hole and W H is the polaron formation energy. 20 The polaron formation energy in our case can be attributed to the energy splitting of the charge-transfer central peak ͑see inset in Fig. 3a͒, which is interpreted as a polaron gap, W H = ⌬ g , and is almost the same for the NSMO/STO and NSMO/LAO films.…”

Section: Discussionmentioning

confidence: 99%

“…19 Figure 3b shows the temperature dependence of the resistance, R͑T͒, without ͑open symbols͒ and with ͑solid symbols͒ an applied magnetic field of 5 T, for the same films. An analysis of the experimental R͑T͒ curves terms of the smallpolaron motion model, 20 R͑T͒ϳT exp͑E A / k B T͒, where E A is an activation energy and k B is the Boltzmann constant, yields E A = 150 and 110 meV, for NSMO/STO and NSMO/LAO, respectively. Figure 4 shows the in-plane FC ͑solid symbols͒ and the ZFC ͑open symbols͒ temperature dependences of the magnetic moment, M͑T͒, for the NSMO/STO films with thickness d = 240 ͑a͒, 120 ͑b͒ and 60 ͑c͒ nm at different applied magnetic fields.…”

Section: Figure 3amentioning

confidence: 99%

Two-dimensional growth, anisotropic polaron transport, and magnetic phase segregation in epitaxial Nd0.52Sr0.48MnO3 films

Prokhorov

Kaminsky

Kim

et al. 2011

Low Temperature Physics

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͑Submitted May 5, 2010͒ Fiz. Nizk. Temp. 37, 141-149 ͑February 2011͒ Nd 0.52 Sr 0.48 MnO 3 films have been fabricated by dc magnetron sputtering on single-crystal LaAlO 3 ͑001͒ and SrTiO 3 ͑011͒ substrates with additional annealing to relax the lattice strain. Although the Nd 0.52 Sr 0.48 MnO 3 films were deposited simultaneously on different substrates at the same deposition rate, they differ in thickness by a factor of Ӎ ͱ 2. The observed difference in thickness is explained by the two-dimensional ͑layer-by-layer͒ film growth, rather than by a difference in growth rate controlled by the crystalline orientation of the substrate. An analysis of optical and transport properties reveals that the observed anisotropy in the polaron motion is governed by a strong anisotropy in the trapping energy, rather than in polaron formation. It is shown that the deposited Nd 0.52 Sr 0.48 MnO 3 films exhibit magnetic behavior typical of two-phase magnetic systems and should be regarded as an assembly of interacting magnetic clusters.

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Conduction in LaCoO3by small-polaron hopping below room temperature

Cited by 152 publications

References 63 publications

Influence of Al doping in LaCoO3 on structural, electrical and magnetic properties

Influence of Al doping in LaCoO3 on structural, electrical and magnetic properties

Dielectric response to the low-temperature magnetic defect structure and spin state transition in polycrystallineLaCoO3

Two-dimensional growth, anisotropic polaron transport, and magnetic phase segregation in epitaxial Nd0.52Sr0.48MnO3 films

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